Martin Schmatz  Martin Schmatz photo         

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KeyProtect Technologies & IoT Edge Computing, Member IBM AoT
Zurich Research Laboratory, Zurich, Switzerland
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Professional Associations

Professional Associations:  IEEE, Senior Member

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More information:  Systems department


2015

When Virtual Meets Physical at the Edge: A Field Study on Datacenters' Virtual Traffic
Robert Birke, Mathias Björkqvist, Cyriel Minkenberg, Martin Schmatz, Lydia Y. Chen
Proceedings of the 2015 ACM SIGMETRICS International Conference on Measurement and Modeling of Computer Systems, pp. 403-415

RStore: A Direct-Access DRAM-based Data Store
A. Trivedi, P. Stuedi, B. Metzler, C. Lutz, M. Schmatz, T.R. Gross
IEEE 35th International Conference on Distributed Computing Systems (ICDCS), pp. 674-685, 2015

Energy-Efficient High-Speed SAR ADCs in CMOS
Lukas Kull, Thomas Toifl, Martin Schmatz, Pier Andrea Francese, Christian Menolfi, Matthias Braendli, Marcel Kossel, Thomas Morf, Toke Meyer Andersen, Yusuf Leblebici
High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing, pp. 45-63, Springer, 2015


2014

A 110 mW 6 bit 36 GS/s interleaved SAR ADC for 100 GBE occupying 0.048 mm2 in 32 nm SOI CMOS
L. Kull, J. Pliva, T. Toifl, M. Schmatz, P.A. Francese, C. Menolfi, M. Braendli, M. Kossel, T. Morf, T.M. Andersen, Y. Leblebici
IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 89-92, 2014

Scalable, efficient ASICS for the square kilometre array: From A/D conversion to central correlation
M.L. Schmatz, R. Jongerius, G. Dittmann, A. Anghel, T. Engbersen, J. van Lunteren, P. Buchmann
IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP), 2014

22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32 nm digital SOI CMOS
L. Kull, T. Toifl, M. Schmatz, P.A. Francese, C. Menolfi, M. Braendli, M. Kossel, T.Morf, T.M. Andersen, Y. Leblebici
IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 378-379, 2014


2013

A 35mW8 b 8.8 GS/s SAR ADC with low-power capacitive reference buffers in 32nm Digital SOI CMOS
L. Kull, T. Toifl, M. Schmatz, P.A. Francese, C. Menolfi, M. Braendli, M. Kossel, T. Morf, T.M. Andersen, Y. Leblebici
2013 Symposium on Circuits (VLSIC)

A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS
L, . Kull, T. Toifl, M. Schmatz, P.A. Francese, C. Menolfi, M. Brandli, M. Kossel, T. Morf, T.M. Andersen, Y. Leblebici
IEEE Journal of Solid-State Circuits 48(12), 2013


2010

A 4.5 mW/Gb/s 6.4 Gb/s 22+ 1-lane source synchronous receiver core with optional cleanup PLL in 65 nm CMOS
R. Reutemann, M. Ruegg, F. Keyser, J. Bergkvist, D. Dreps, T. Toifl, M. Schmatz
IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 2850-2860, IEEE, 2010


2009

A 5.75 to 44 Gb/s quarter rate CDR with data rate selection in 90 nm bulk CMOS
L Rodoni, G Buren von, A Huber, M Schmatz, H Jackel
Solid-State Circuits, IEEE Journal of 44(7), 1927--1941, IEEE, 2009

Switched Inductor With Wide Tuning Range and Small Inductance Step Sizes
M. Kossel, T. Morf, P. Buchmann, M.L. Schmatz, C. Menolfi, T. Toifl
IEEE Microwave and Wireless Components Letters 19(8), 515-517, 2009

LC PLL with 1.2-octave locking range based on mutual-inductance switching in 45-nm SOI CMOS
M. KOSSEL, T. MORF, J. WEISS, P. BUCHMANN, C. MENOLFI, T. TOIFL, M.L. SCHMATZ
IEEE Journal of Solid-State Circuits 44(2), 436-449, 2009

Antenna coupled far-infrared/THz detector in CMOS
T. Morf, J. Weiss, L. Kull, H. Rothuizen, T. Toifl, M. Kossel, C. Menolfi, G. von Bueren, T. Brunschwiler, M. Schmatz
Electronics Letters 45(25), 1321-1323, IET, 2009

A 1.25-5 GHz clock generator with high-bandwidth supply-rejection using a regulated-replica regulator in 45-nm CMOS
T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, M.L. Schmatz
IEEE Journal of Solid-State Circuits 44(11), 2901-2910, 2009


2008

Integration of optical I/O with organic chip packages
B J Offrein, C Berger, L Dellmann, P Dill, F Horst, M Schmatz, S Oggioni, M Spreafico, G Macario
Proceedings of SPIE, the International Society for Optical Engineering, pp. 69920U--1, 2008

5.75 to 44Gb/s quarter rate CDR with data rate selection in 90nm bulk CMOS
G Bueren von, L Rodoni, H Jaeckel, A Huber, R Brun, D Holzer, M Schmatz
Solid-State Circuits Conference, 2008, pp. 166--169

A T-Coil-Enhanced 8.5 Gb/s High-Swing SST Transmitter in 65 nm Bulk CMOS With -16 dB Return Loss Over 10 GHz Bandwidth
M Kossel, C Menolfi, J Weiss, P Buchmann, G Bueren von, L Rodoni, T Morf, T Toifl, M Schmatz
IEEE Journal of Solid-State Circuits 43(12), 2905-2920, 2008

A small-area voltage regulator with high-bandwidth supply-rejection using a regulated replica in 45nm CMOS SOI
T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, M. Schmatz
IEEE Asian Solid-State Circuits Conference, pp. 157-160, 2008


2007

A Low-Power 40 Gbit/s Receiver Circuit Based on Full-Swing CMOS-Style Clocking
Thomas Toifl, Christian Menolfi, Peter Buchmann, Christoph Hagleitner, Marcel Kossel, Thomas Morf, Jonas Weiss, Martin Schmatz
IEEE Compound Semiconductor Integrated Circuit Symposium, pp. 1-4, 2007

Wide tuning range LC-oscillator in 65nm SOI CMOS, based on switchable secondary inductor
T. Morf, M. Kossel, J. Weiss, C. Menolfi, T. Toifl, G. von Bueren, R. Bucnmann, M. Schmatz
Electronics Letters 43(24), 1364-1365, IET, 2007

A 16Gb/s source-series terminated transmitter in 65nm CMOS SOI
C. Menolfi, T. Toifl, P. Buchmann, M. Kossel, T. Morf, J. Weiss, M. Schmatz
IEEE Solid-State Circuits Conference ISSCC, pp. 446-614, 2007

A 72mW 0.03 mm2 inductorless 40Gb/s CDR in 65nm SOI CMOS
T. Toifl, C. Menolfi, P. Buchmann, C. Hagleitner, M. Kossel, T. Morf, J. Weiss, M. Schmatz
IEEE Solid-State Circuits Conference ISSCC, pp. 226-598, 2007


2006

A DC-to-44-GHz 19dB Gain Amplifier in 90nm CMOS Using Capacitive Bandwidth Enhancement
J.R.M. Weiss, M.A. Kossel, C. Menolfi, T. Morf, M.L. Schmatz, T. Toifl, H. Jaeckel
IEEE Solid-State Circuits Conference ISSCC, pp. 2082-2091, 2006


A 25-Gb/s CDR in 90-nm CMOS for high-density interconnects
C Kromer, G Sialm, C Menolfi, M Schmatz, F Ellinger, H Jackel
Solid-State Circuits, IEEE Journal of 41(12), 2921--2929, Ieee, 2006

A 40-Gb/s, digitally programmable peaking limiting amplifier with 20-dB differential gain in 90-nm CMOS
J R M Weiss, M L Schmatz, H Jaeckel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE, pp. 4--pp

A 22-Gb/s PAM-4 receiver in 90-nm CMOS SOI technology
T. Toifl, C. Menolfi, M. Ruegg, R. Reutemann, P. Buchmann, M. Kossel, T. Morf, J. Weiss, M.L. Schmatz
IEEE Journal of Solid-State Circuits 41(4), 954-965, 2006



2005

Electrical and optical transceivers for short-range data communication, fabricated in VLSI 90-nm bulk and SOI CMOS technology
T Morf, C Menolfi, T Toifl, C Kromer, G Sialm, M Kossel, J Weiss, P Buchmann, C Berger, M Schmatz
IEEE Compound Semiconductor Integrated Circuit Symposium, pp. 4, 2005

A 0.94-ps-RMS-jitter 0.016-mm2 2.5-GHz multiphase generator PLL with 360 degree digitally programmable phase shift for 10-Gb/s serial links
T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, R. Reutemann, M. Ruegg, M.L. Schmatz, J. Weiss
IEEE Journal of Solid-State Circuits 40(12), 2700-2712, 2005

A 22 Gbit/s PAM-4 receiver in 90 nm CMOS-SOI technology
T. Toifl, C. Menolfi, M. Ruegg, R. Reutemann, P. Buchmann, M. Kossel, T. Morf, M. Schmatz
IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 380-383, 2005

Effect of body contacts on high-speed circuits in 90 nm CMOS SOI technology
J R M Weiss, C Menolfi, T Morf, M L Schmatz, H Jaeckel
Signals, Circuits and Systems, 2005, pp. 537--540

A low-jitter wideband multiphase PLL in 90nm SOI CMOS technology
M. Kossel, P. Buchmann, C. Menolfi, T. Morf, T. Toifl, M. Schmatz
IEEE Solid-State Circuits Conference ISSCC, Digest of Technical Papers, pp. 414-415, 2005

A 25Gb/s PAM4 transmitter in 90nm CMOS SOI
C. Menolfi, T. Toifl, R. Reutemann, M. Ruegg, P. Buchmann, M. Kossel, T. Morf, M. Schmatz
IEEE Solid-State Circuits Conference ISSCC, Digest of Technical Papers, pp. 72-73, 2005

A 100-mW 4$\times$ 10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects
C Kromer, G Sialm, C Berger, T Morf, M L Schmatz, F Ellinger, D Erni, G L Bona, H Jackel
Solid-State Circuits, IEEE Journal of 40(12), 2667--2679, IEEE, 2005


2004

A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS
C Kromer, G Sialm, T Morf, M L Schmatz, F Ellinger, D Erni, H Jackel
Solid-State Circuits, IEEE Journal of 39(6), 885--894, IEEE, 2004

30-40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOI CMOS technology
F. Ellinger, L.C. Rodoni, G. Sialm, C. Kromer, G. von Buren, M.L. Schmatz, C. Menolfi, T. Toifl, T. Morf, M. Kossel, others
IEEE Transactions on Microwave Theory and Techniques 52(5), 1382-1391, 2004

A multiphase PLL for 10 Gb/s links in SOI CMOS technology
M. Kossel, T. Morf, W. Baumberger, A. Biber, C. Menolfi, T. Toifl, M. Schmatz
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 207-210, 2004

A C-band monolithic silicon-bipolar low-power low-IF WLAN receiver
C Carta, M Schmatz, R Vogt, W Bachtold
Wireless Technology, 2004, pp. 5--8

BiCMOS variable gain LNA at C-band with ultra low power consumption for WLAN
F Ellinger, C Carta, L Rodoni, G B{"u}ren von, D Barras, M Schmatz, H J{"a}ckel
Telecommunications and Networking-ICT 2004, 183--192, Springer

Jitter measurements of high-speed serial links
M A Kossel, M L Schmatz
Design \& Test of Computers, IEEE 21(6), 536--543, IEEE, 2004

A low power DC-7.8 GHz BiCMOS LNA for UWB and optical communication
F Ellinger, D Barras, M Schmatz, H Jackel
Microwave Symposium Digest, 2004 IEEE MTT-S International, pp. 13--16

60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology
F Ellinger, T Morf, G Buren, C Kromer, G Sialm, L Rodoni, M Schmatz, H Jackel
Microwave Symposium Digest, 2004 IEEE MTT-S International, pp. 1329--1332


2003

A 23GHz differential amplifier with monolithically integrated T-coils in 0.09/μm CMOS technology
T. Toifl, M. Kossel, C. Menolfi, T. Morf, M. Schmatz
IEEE MTT-S International Microwave Symposium, pp. 239-242, 2003

Wideband CMOS transimpedance amplifier
M. Kossel, C. Menolfi, T. Morf, M. Schmatz, T. Toifl
Electronics letters 39(7), 587-588, IET, 2003

High-density optical interconnects within large-scale systems
C. Berger, M.A. Kossel, C. Menolfi, T. Morf, T. Toifl, M.L. Schmatz
Photonics Fabrication Europe, pp. 222--235, 2003

High-Q inductors on digital VLSI CMOS substrate for analog RF applications
F Ellinger, M Kossel, M Huber, M Schmatz, C Kromer, G Sialm, D Barras, L Rodoni, G Buren von, H Jackel
Microwave and Optoelectronics Conference, 2003, pp. 869--872

Optical links for printed circuit boards
C. Berger, R. Beyeler, G.L. Bona, R. Dangel, L. Dellmann, P. Dill, F. Horst, M.A. Kossel, C. Menolfi, T. Morf, others
16th IEEE Lasers and Electro-Optics Society LEOS, pp. 61-62, 2003


2000

Accurate De-embedding of CMOS Transistors from On-wafer Measurements Up to 110 GHz Using Automatically Characterized CMOS Calibration Structures
M L Schmatz, T Morf
2000 - IBM TJ Watson Research Center, IBM TJ Watson Research Center

High-speed and high-density chip-to-chip interconnections: Trends and techniques
M L Schmatz
Electrical Performance of Electronic Packaging, 2000, IEEE Conference on, pp. 23--24


1998

A nonlinear microwave MOSFET model for SPICE simulators
C E Biber, M L Schmatz, T Morf, U Lott, W Bachtold
Microwave Theory and Techniques, IEEE Transactions on 46(5), 604--610, IEEE, 1998


1995

Novel design topology for ultra low power down converters with broadband on chip matching network
M L Schmatz, U Lott, W Baumberger, W Baechtold
Microwave Theory and Techniques, IEEE Transactions on 43(12), 2946--2951, IEEE, 1995