Jean Fompeyrine  Jean Fompeyrine photo         

contact information

Research Staff Member
IBM Research | Zurich, Switzerland
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Professional Associations

Professional Associations:  European Materials Research Society


2018

Integrated Ferroelectric BaTiO3/Si Plasmonic Modulator for 100 Gbit/s and Beyond
A. Messner, F. Eltes, P. Ma, S. Abel, B. Baeuerle, A. Josten, W. Heni, D. Caimi, J. Fompeyrine, J. Leuthold
Optical Fiber Communication Conference, 2018

Plasmonic Ferroelectric Modulators
A. Messner, F. Eltes, P. Ma, S. Abel, B. Baeuerle, A. Josten, D. Caimi, J. Fompeyrine, J. Leuthold
Journal of Lightwave Technology, 2018

Monolithic integration of Si / BaTiO3 electro-optic modulators on a silicon photonics platform
F. Eltes, D. Caimi, C. Mai, G. Winzer, D. Petousi, S. Lischke, L. Czornomaz, L. Zimmermann, J. Fompeyrine, S. Abel
IEEE Photonics Conference (IPC), pp. 1-2, 2018

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability
F. Eltes, Barreto, D. Caimi, S. Karg, A. A. Gentile, A. Hart, P. Stark, N. Meier, M. G. Thompson, J. Fompeyrine, S. Abel
IEEE International Electron Devices Meeting (IEDM), 2018

Scaling without scaling - A paradigm shift in the semiconductor industry
C.B. Zota, L. Czornomaz, J. Fompeyrine, S. Abel
Europhysics News 49(5-6), 22-25, 2018

Scaling Optical Interconnects Beyond 400Gb/s
P. Mentovich, Bakopoulos, P. Ma, D. Tsiokos, H. Hettrich, F. Eltes, C. Uhl, S. Lischke, D. Petousi, S. Abel, R. Schmid, G. Dabos, D. Kalavrouziotis, A. Manolis, A. Rubinstein, D. Moor, L. Zimmermann, N. Pleros, M. Möller, J. Fompeyrine, J. Leuthold, E. Mentovich
IEEE European Conference on Optical Communication (ECOC), 2018

Strain enhancement of the electro-optical response in BaTiO3 films integrated on Si(001)
K.D. Fredrickson, V.V. Vogler-Neuling, K.J. Kormondy, D. Caimi, F. Eltes, M. Sousa, J. Fompeyrine, S. Abel, A.A. Demkov
Physical Review B 98(7), 1-6, 2018

Record High Pockels Coefficient in PIC-Compatible BaTiO3/Si Photonic Devices
F. Eltes, J.E. Ortmann, D. Urbonas, D. Caimi, L. Czornomaz, C. Mai, L. Zimmermann, J. Fompeyrine, S. Abel
IEEE European Conference on Optical Communication (ECOC), 2018

Large Pockels effect in micro- and nano-structured barium titanate integrated on silicon
S. Abel, F. Eltes, J.E. Ortmann, A. Messner, P. Castera, T. Wagner, D. Urbonas, A. Rosa, A.M. Gutierrez, D. Tulli, P. Ma, B. Baeuerle, A. Josten, W. Heni, D. Caimi, L. Czornomaz, A.A. Demkov, J. Leuthold, P. Sanchis, J. Fompeyrine
Nature Materials, 2018

Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique
Eamon O'Connor, Mattia Halter, Felix Eltes, Marilyne Sousa, Andrew Kellock, Stefan Abel, and Jean Fompeyrine
Applied Physics Letters: Materials6, 121130, 2018


2017

Integrated Ferroelectric Plasmonic Optical Modulator
A. Messner, F. Eltes, P. Ma, S. Abel, B. Baeuerle, A. Josten, W. Heni, D. Caimi, J. Fompeyrine, J. Leuthold
Optical Fiber Communications Conference and Exhibition (OFC), 2017

Bringing III-Vs into CMOS: From Materials to Circuits (invited)
L. Czornomaz, V.V. Deshpande, E. O'Connor, D. Caimi, M. Sousa, J. Fompeyrine
ECS Transactions, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7, 2017

Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics
K.J. Kormondy, A.A. Demkov, Y. Popoff, M. Sousa, F. Eltes, D. Caimi, C. Marchiori, J. Fompeyrine, S. Abel
IEEE International Conference on IC Design and Technology (ICICDT), 2017

Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration
V. Deshpande, H. Hahn, V. Djara, E. O'Connor, C. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz
Proc. European Solid-State Device Research Conference (ESSDERC), pp. 244-247, 2017

Multi-Level Optical Weights in Integrated Circuits
S. Abel, D.J. Stark, F. Eltes, J.E. Ortmann, D. Caimi, J. Fompeyrine
IEEE International Conference on Rebooting Computing (ICRC), 2017

DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine
Solid-State Electronics, Special issue 128, 87-91, 2017

Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics
K.J. Kormondy, Y. Popoff, M. Sousa, F. Eltes, D. Caimi, M.D. Rossell, M. Fiebig, P. Hoffmann, C. Marchiori, M. Reinke, M. Trassin, A.A. Demkov, J. Fompeyrine, S. Abel
Nanotechnology 28(7), 075706, 2017

Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, T. Morf, K. Balakrishnan, D. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz
Jpn. J. Appl. Phys. 56(4), 04CA05, 2017

Low Temperature Epitaxial Barium Titanate Thin Film Growth in High Vacuum CVD
M. Reinke, Y. Kuzminykh, F. Eltes, S. Abel, T. LaGrange, A. Neels, J. Fompeyrine, P. Hoffmann
Advanced Materials Interfaces 4(18), 1700116, 2017

Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
V. Deshpande, H. Hahn, E. O'Connor, Y. Baumgartner, D. Caimi, M. Sousa, H. Boutry, J. Widiez, L. Brevard, C. Le Royer, M. Vinet, J. Fompeyrine, L. Czornomaz
IEEE Transactions on Electron Devices 64(11), 4503-4509, 2017

Barium titanate (BaTiO3) RF characterization for application in electro-optic modulators
A. Rosa, D. Tulli, P. Castera, A.M. Gutierrez, A. Griol, M. Baquero, B. Vilquin, F. Eltes, S. Abel, J. Fompeyrine, P. Sanchis
Optical Matierals Express 7(12), 4328-4336, 2017

First Demonstration of 3D SRAM Through 3D Monolithic Integration of InGaAs n-FinFETs on FDSOI Si CMOS with Inter-Layer Contacts
V. Deshpande, H. Hahn, E. O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, H. Boutry, J. Widiez, L. Brevard, C. Le Royer, M. Vinet, J. Fompeyrine, L. Czornomaz
IEEE Symposium on VLSI Technology, 2017

A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform
F. Eltes, M. Kroh, D. Caimi, C. Mai, Y. Popoff, G. Winzer, D. Petousi, S. Lischke, J.E. Ortmann, L. Czornomaz, L. Zimmermann, J. Fompeyrine, S. Abel
IEEE International Electron Devices Meeting (IEDM), 2017


2016

Fabrication and Characterization of InGaAs-on-insulator Lateral N plus /n/N plus Structures
L. Czornomaz, V. Djara, V. Deshpande, D. Caimi, L. Pirro, S. Cristoloveanu, J. Fompeyrine
2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), 2016

First RF Characterization of InGaAs Replacement Metal Gate (RMG) nFETs on SiGe-OI FinFETs Fabricated by 3D Monolithic Integration
V. Deshpande, V. Djara, E. O'Connor, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine, P. Hashemi, K. Balakrishnan
2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), 2016

First Demonstration of InGaAs/SiGe CMOS Inverters and Dense SRAM Arrays on Si Using Selective Epitaxy and Standard FEOL Processes
L. Czornomaz, V. Djara, V. Deshpande, E. O'Connor, M. Sousa, D. Caimi, K. Cheng, J. Fompeyrine
36th IEEE Symposium on VLSI Technology, 2016

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
V. Djara, L. Czornomaz, V. Deshpande, N. Daix, E. Uccelli, D. Caimi, M. Sousa, J. Fompeyrine
Solid-State Electronics115, 102-108, 2016

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With ION=156 μAμm at VDD=0.5V and IOFF=100nA/μm
V. Djara, V. Deshpande, M. Sousa, C. Caimi, L. Czornomaz, J. Fompeyrine
IEEE Electron Device Letters 37(2), 169-172, 2016

A Hybrid Barium Titanate-Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning
S. Abel, T. Stoferle, C. Marchiori, D. Caimi, L. Czornomaz, M. Stuckelberger, M. Sousa, B.J. Offrein, J. Fompeyrine
J. Lightwave Technology 34(8), 1688-1693, 2016

Upconversion photoluminescence of epitaxial Yb3+/Er3+ codoped ferroelectric Pb(Zr,Ti)O3 films on silicon substrates
Y. Zhang, T. Kampfe, G.X. Bai, M. Mietschke, F.F. Yuan, M. Zopf, S. Abel, L.M. Eng, R. Huhne, J. Fompeyrine, F. Ding, O.G. Schmidt
Thin Solid Films607, 32-35, 2016

Low-Loss BaTiO3-Si Waveguides for Nonlinear Integrated Photonics
F. Eltes, D. Caimi, F. Fallegger, M. Sousa, E. O'Connor, M.D. Rossell, B. Offrein, J. Fompeyrine, S. Abel
ACS Photonics 3(9), 1698-1703, 2016

Monolithically Integrated MEMS for On-Chip Strain Engineering of Quantum Dots
Y. Zhang, Y. Chen, M. Mietschke, L. Zhang, F. Yuan, S. Abel, R. Hühne, K. Nielsch, J. Fompeyrine, F. Ding, O.G. Schmidt
Nanoletters 16(9), 5785-5791 , 2016

The 2016 oxide electronic materials and oxide interfaces roadmap
M. Lorenz, M.S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F.K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, D.J. Rogers, F.H. Teherani, E.V. Sandana, P. Bove, K. Rietwyk, A. Zaban, A. Veziridis, A. Weidenkaff, M. Muralidhar, M. Murakami, S. Abel, J. Fompeyrine, J. Zuniga-Perez, R. Ramesh, N.A. Spaldin, S. Ostanin, V. Borisov, I. Mertig, V. Lazenka, G. Srinivasan, W. Prellier, M. Uchida, M. Kawasaki
Journal of Applied Physics D 49(43), 433001, 2016


2015

An InGaAs on Si Platform for CMOS with 200 mm InGaAs-OI Substrate, Gate-first, Replacement Gate Planar and FinFETs Down to 120 nm Contact Pitch
V. Djara, V. Deshpande, E. Uccelli, N. Daix, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J.M. Hartmann, K.T. Shiu, C.W. Weng, M. Krishnan, M. Lofaro, R. Steiner, D. Sadana, D. Lubyshev, A. Liu, L. Czornomaz, J. Fompeyrine
35th Anniversary of the Symposium on VLSI Technology, 2015

A mode-engineered hybrid III-V-on-silicon photodetector
J. Hofrichter, L. Czornomaz, F. Horst, M. Seifried, D. Caimi, N. Meier, J. Fompeyrine, B.J. Offrein
41st European Conference on Optical Communication (ECOC), 2015

Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance
S. Abel, T. Stoferle, C. Marchiori, D. Caimi, L. Czornomaz, M.D. Rossell, R. Erni, M. Sousa, H. Siegwart, B.J. Offrein, J. Fompeyrine
41st European Conference on Optical Communication (ECOC), 2015

Tri-gate In0.53Ga0.47As-on-insulator Junctionless Field Effect Transistors
V. Djara, L. Czornomaz, N. Daix, D. Caimi, V. Deshpande, E. Uccelli, M. Sousa, C. Marchiori, J. Fompeyrine
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015

Advanced 3D Monolithic Hybrid CMOS with Sub-50 nm Gate Inverters Featuring Replacement Metal Gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, K. Balakrishnan, M. Sousa, D. Caimi, A. Olziersky, L. Czornomaz, J. Fompeyrine
IEEE International Electron Devices Meeting (IEDM), 2015

Integration of Functional Oxides on SOI for Agile Silicon Photonics
P.R. Romeo, X. Hu, S. Cueff, B. Wague, R. Orobtchouk, B. Vilqui, R. Bachelet, G. Grenet, C. Dubourdieu, P. Regreny, G. Saint-Girons, P. Castera, A.M. Gutierrez, N. Sanchez, T. Angelova, P. Sanchis, S. Abel, J. Fompeyrine
17th International Conference on Transparent Optical Networks (ICTON), 2015

Optical nonlinear barium titanate thin films integrated in silicon photonic devices
S. Abel, T. Stöferle, C. Marchiori, D. Caimi, L. Czornomaz, M.D. Rossell, R. Erni, M. Sousa, B.J. Offrein, J. Fompeyrine
The European Conference on Lasers and Electro-Optics (CLEO), 2015

Material and Device Integration for Hybrid III-V/SiGe CMOS Technology (invited)
V.V. Deshpande, V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz, J. Fompeyrine
ECS Transactions, pp. 131-142, 2015

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
V. Djara, M. Sousa, N. Dordevic, L. Czornomaz, V. Deshpande, C. Marchiori, E. Uccelli, D. Caimi, C. Rossel, J. Fompeyrine
Microelectronic Engineering147, 231-234, 2015

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)
K.J. Kormondy, S. Abel, F. Fallegger, Y. Popoff, P. Ponath, A.B. Posadas, M. Sousa, D. Caimi, H. Siegwart, E. Uccelli, L. Czornomaz, C. Marchiori, J. Fompeyrine, A.A. Demkov
Microelectronic Engineering147, 215-218, 2015

Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
L. Czornomaz, E. Uccelli, M. Sousa, V. Deshpande, V. Djara, D. Caimi, M.D. Rossell, R. Erni, J. Fompeyrine
IEEE Symposium on VLSI Technology (VLSI Technology), 2015


2014

Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristic
L. Czornomaz, N. Daix, D. Caimi, V. Djara, E. Uccelli, C. Rossel, C. Marchiori, M. Sousa, J. Fompeyrine
IEEE Silicon Nanoelectronics Workshop (SNW), 2014

Co-integrating high mobility channels for future CMOS, from substrate to circuits
L. Czornomaz, N. Daix, E. Uccelli, D. Caimi, M. Sousa, C. Rossel, H. Siegwart, C. Marchiori, J. Fompeyrine
26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014

Silicon CMOS Compatible Transition Metal Dioxide Technology for Boosting Highly Integrated Photonic Devices with Disruptive Performance
P. Sanchis, L. Sanchez, P. Castera, A. Rosa, A.M. Gutierrez, A. Brimont, G. Saint-Girons, R. Orobtchouk, S. Cueff, P. Rojo-Romeo, R. Bachelet, P. Regreny, B. Vilquin, C. Dubourdieu, X. Letartre, G. Grenet, J. Penuelas, X. Hu, L. Louahadj, J.P. Locquet, L. Zimmermann, C. Marchiori, S. Abel, J. Fompeyrine, A. Hakansson
16th International Conference on Transparent Optical Networks (ICTON), 2014

Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm
L. Czornomaz, N. Daix, E. Uccelli, V. Djara, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J.M. Hartmann, J. Fompeyrine
13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications, ECS Transactions, Semiconductor Wafer Bonding 13: Science, Technology and Applications , pp. 199-209 , 2014

III/V layer growth on Si and Ge surfaces for Direct Wafer Bonding as a path for hybrid CMOS
E. Uccelli, N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J.M. Hartmann, J. Fompeyrine
7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014

Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces
C. Marchiori, M. El Kazzi, L. Czornomaz, D. Pierucci, M. Silly, F. Sirotti, S. Abel, E. Uccelli, M. Sousa, J. Fompeyrine
J. Physics D - Appl. Phys. 47(5), 055101, 2014

Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
C. Rossel, P. Weigele, L. Czornomaz, N. Daix, D. Caimi, M. Sousa, J. Fompeyrine
Solid-State Electronics98, 88-92, 2014

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N. Daix, E. Uccelli, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. M. Hartmann, K.-T. Shiu, C.-W. Cheng, M. Krishnan, M. Lofaro, M. Kobayashi, D. Sadana, J. Fompeyrine
Applied Materials 4(8), 086104, 2014


2013

Advanced physical characterization of Si-passivated III-V semiconductors for low-power logic applications: Defect chemistry, band bending and surface photo-voltage
C. Marchiori, M. El-Kazzi, L. Czornomaz, D. Pierucci, M. Silly, F. Sirotti, S. Abel, E. Uccelli, M. Sousa, J. Fompeyrine
ECS Meeting, 2013

Electro-optical active barium titanate thin films in silicon photonics devices
S. Abel, T. Stöferle, C. Marchiori, D. Caimi, L. Czornomaz, C. Rossel, M. Rossell, R. Erni, M. Sousa, H. Siegwart, J. Hofrichter, M. Stuckelberger, A. Chelnokov, B.J. Offrein, J. Fompeyrine
OSA Integrated Photonics Research "IPR," Silicon and Nanophotonics, 2013

Thermal Stability of Ultra-Thin InGaAs-on-Insulator Substrates
N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa, J. Fompeyrine
IEEE International SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 2013

Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
L. Czornomaz, N. Daix, K. Cheng, D. Caimi, C. Rossel, K. Lister, M. Sousa, J. Fompeyrine
IEEE International Electron Devices Meeting (IEDM), 2013

Physical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47As (invited)
C. Marchiori, M. El Kazzi, L. Czornomaz, D. Pierucci, M. Silly, F. Sirotti, S. Abel, E. Uccelli, M. Sousa, J. Fompeyrine
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 held during the 224th Meeting of the Electrochemical-Society, 2013

Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
L. Czornomaz, N. Daix, P. Kerber, K. Lister, D. Caimi, C. Rossel, M. Sousa, E. Uccelli, J. Fompeyrine
43rd Conference on European Solid-State Device Research (ESSDERC), 2013

Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
M.J.P. Hopstaken, D. Pfeiffer, M. Copel, M.S. Gordon, T. Ando, V. Narayanan, H. Jagannathan, S. Molis, J.A. Wahl, H. Bu, D.K. Sadana, L. Czornomaz, C. Marchiori, J. Fompeyrine
Surface and Interface Analysis, Special issue, 45(1), 338-344, 2013

Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si
S. Abel, M. Sousa, C. Rossel, D. Caimi, M.D. Rossell, R. Erni, J. Fompeyrine, C. Marchiori
Nanotechnology 24(28), 285701, 0957-4484, 2013

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
M. Richter, E. Uccelli, A.G. Taboada, D. Caimi, N. Daix, M. Sousa, C. Marchiori, H. Siegwart, C.V. Falub, H. von Kanel, F. Isa, G. Isella, A. Pezous, A. Dommann, P. Niedermann, J. Fompeyrine
J. Crystal Growth378, 109-112, 2013

A strong electro-optically active lead-free ferroelectric integrated on silicon
S. Abel, T. Stöferle, C. Marchiori, C. Rossel, M.D. Rossell, R. Erni, D. Caimi, M. Sousa, A. Chelnokov, B.J. Offrein, J. Fompeyrine
Nature Communications 4, 1671, 2013


2012

Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
MJP Hopstaken, D. Pfeiffer, M. Copel, MS Gordon, T. Ando, V. Narayanan, H. Jagannathan, S. Molis, JA Wahl, H. Bu, D.K. Sadana, L. Czornomaz, C. Marchiori, J. Fompeyrine
Surface and Interface Analysis 45(1), 338-344, Wiley Online Library, 2012

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53 Ga0.47As metal-oxide-semiconductor field-effect-transistors
M. El Kazzi, L. Czornomaz, C. Rossel, C. Gerl, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 100(6), 063505-063505, 2012

Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
L Czornomaz, M El Kazzi, D Caimi, C Rossel, E Uccelli, M Sousa, C Marchiori, M Richter, H Siegwart, J Fompeyrine
70th Annual Device Research Conference (DRC), pp. 207-208, 2012

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
L. Czornomaz, M. El Kazzi, M. Hopstaken, D. Caimi, P. Machler, C. Rossel, M. Bjoerk, C. Marchiori, H. Siegwart, J. Fompeyrine
Solid-State Electronics74, 71-76, Elsevier, 2012


2011

Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium
C. Andersson, MJ Suess, DJ Webb, C. Marchiori, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Journal of Applied Physics 110(11), 114504-114504, AIP, 2011

Self-aligned S/D regions for InGaAs MOSFETs
L Czornomaz, M El Kazzi, D Caimi, P Machler, C Rossel, M Bjoerk, C Marchiori, J Fompeyrine
Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 219-222, 2011

Characterization of Strontium Oxide Layers on Silicon for CMOS High-K Gate Stack Scaling
J. Bruley, M. Frank, C. Marchiori, J. Fompeyrine, V. Narayanan
Microscopy and Microanalysis 17(S2), 1350-1351, Cambridge Univ Press, 2011

GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
M. Richter, C. Rossel, DJ Webb, T. Topuria, C. Gerl, M. Sousa, C. Marchiori, D. Caimi, H. Siegwart, PM Rice
Journal of Crystal Growth 323(1), 387-392, 2011

1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
M. El Kazzi, DJ Webb, L. Czornomaz, C. Rossel, C. Gerl, M. Richter, M. Sousa, D. Caimi, H. Siegwart, J. Fompeyrine
Microelectronic Engineering 88(7), 1066-1069, 2011

Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
M. El Kazzi, L. Czornomaz, DJ Webb, C. Rossel, D. Caimi, H. Siegwart, J. Fompeyrine, C. Marchiori
Applied Physics Letters 99(5), 052102-052102, 2011


Epitaxial SrO interfacial layers for HfO2-Si gate stack scaling
C. Marchiori, MM Frank, J. Bruley, V. Narayanan, J. Fompeyrine
Applied Physics Letters 98(5), 052908-052908, 2011


2010

Structural and electrical properties of fully strained (In, Ga) As field effect transistors with in situ deposited gate stacks
C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.P. Locquet, T. Smets, M. Sousa, C. Andersson
Applied Physics Letters 96(21), 212901-212901, 2010

Structural properties of epitaxial SrHfO3 thin films on Si (001)
M. Sawkar-Mathur, C. Marchiori, J. Fompeyrine, M.F. Toney, J. Bargar, J.P. Chang
Thin Solid Films 518(6), S118-S122, Elsevier, 2010

Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
M.J. Hopstaken, D. Pfeiffer, M.S. Gordon, E.W. Kiewra, Y. Sun, D.K. Sadana, T. Topuria, P.M. Rice, P. Ronsheim, C. Gerl
ECS Transactions 28(5), 207-215, 2010


2009

Impact of La2 O3 Thickness on HfO2/La2 O3/Ge capacitors and p-channel MOSFETs
C. Andersson, M. Sousa, C. Marchiori, D.J. Webb, D. Caimi, H. Siegwart, J. Fompeyrine, C. Rossel, A. Dimoulas, Y. Panayiotatos
Solid State Device Research Conference, 2009. ESSDERC'09. Proceedings of the European, pp. 173-176

CMOS Scaling Beyond 22 nm Node
D. Sadana, S.W. Bedell, JP De Souza, Y. Sun, E. Kiewra, A. Reznicek, T. Adams, K. Fogel, GG Shahidi, C. Marchiori, others
ECS Transactions 19(5), 267-274, The Electrochemical Society, 2009

Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
C. Andersson, C. Rossel, M. Sousa, DJ Webb, C. Marchiori, D. Caimi, H. Siegwart, Y. Panayiotatos, A. Dimoulas, J. Fompeyrine
Microelectronic Engineering 86(7), 1635-1637, Elsevier, 2009

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
C. Marchiori, DJ Webb, C. Rossel, M. Richter, M. Sousa, C. Gerl, R. Germann, C. Andersson, J. Fompeyrine
Journal of Applied Physics 106(11), 114112, 2009


2008

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
JP De Souza, E. Kiewra, Y. Sun, A. Callegari, DK Sadana, G. Shahidi, DJ Webb, J. Fompeyrine, R. Germann, C. Rossel
Applied Physics Letters 92(15), 153508, 2008

Ge p-channel MOSFETS with La2O3 and Al2O3 gate dielectrics
C. Rossel, A. Dimoulas, A. Tapponnier, D. Caimi, DJ Webb, C. Andersson, M. Sousa, C. Marchiori, H. Siegwart, J. Fompeyrine, others
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European, pp. 79-82

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
C. Dieker, J.W. Seo, A. Guiller, M. Sousa, J.P. Locquet, J. Fompeyrine, Y. Panayiotatos, A. Sotiropoulos, K. Argyropoulos, A. Dimoulas
Microscopy of Semiconducting Materials 2007, pp. 119-122, Springer, 2008

From GaAs MOSFETs to epitaxial oxides on silicon: old and new MBE stories.
J. Fompeyrine
Bulletin of the American Physical Society53, APS, 2008

Gate Dielectrics for High Mobility Semiconductors
A. Dimoulas, Y. Panayiotatos, P. Tsipas, S. Galata, G. Mavrou, A. Sotiropoulos, C. Marchiori, C. Rossel, D. Webb, C. Andersson, others
ECS Transactions 16(5), 295-306, The Electrochemical Society, 2008

Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
J.W. Seo, EE Fullerton, F. Nolting, A. Scholl, J. Fompeyrine, J.P. Locquet
Journal of Physics: Condensed Matter 20(26), 264014, IOP Publishing, 2008


2007

Enhancement-Mode Buried-Channel In0.7Ga0.3As/In0.52A0.48As MOSFETs With High-k Gate Dielectrics
Y Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, J Fompeyrine, DJ Webb, J P Locquet, others
Electron Device Letters, IEEE 28(6), 473-475, IEEE, 2007

Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow
L. Pantisano, T. Conard, T. Scram, W. Deweerd, S. Gendt, M. Heyns, ZM Rittersma, C. Marchiori, M. Sousa, J. Fompeyrine, others
Advanced Gate Stacks for High-Mobility Semiconductors, 363-374, Springer, 2007

Enhancement-Mode Buried-Channel
Yanning Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, J Fompeyrine, DJ Webb, JP Locquet, others
IEEE electron device letters 28(6), 473, 2007

Evaluation of a SrTiO3 sublayer for the integration of ferroelectric material KTN thin films in silicon technology
A. Guiller, AG Moussavou, M. Guilloux-Viry, R. Sauleau, K. Mahdjoubi, J. Fompeyrine, A. Perrin, others
E-MRS 2007

Post-Si CMOS: III-V n-MOSFETs with High-k Gate Dielectrics
Y. Sun, SJ Koester, EW Kiewra, JP de Souza, N. Ruiz, JJ Bucchignano, A. Callegari, KE Fogel, DK Sadana, J. Fompeyrine, others
Compound Semiconductor Integrated Circuit Symposium, 2007

Optical properties of epitaxial SrHfO3 thin films grown on Si
M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.P. Locquet, D.J. Webb, R. Germann, J. Fompeyrine, K. Babich
Journal of Applied Physics 102(10), 104103, 2007

Epitaxial germanium-on-insulator grown on (001) Si
J.W. Seo, C. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos
Microelectronic Engineering 84(9), 2328-2331, ., 2007

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAPs: Effect of GaAs surface reconstruction
DJ Webb, J. Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, SF Alvarado, J.P. Locquet, C. Marchiori
Microelectronic Engineering 84(9), 2142-2145, 2007

SrHfO3 as gate dielectric for future CMOS technology
C. Rossel, M. Sousa, C. Marchiori, J. Fompeyrine, D. Webb, D. Caimi, B. Mereu, A. Ispas, J.P. Locquet, H. Siegwart
Microelectronic Engineering 84(9), 1869-1873, 2007


2006

Solid phase epitaxy of SrTiO3 on (Ba, Sr) O/Si (100): The relationship between oxygen stoichiometry and interface stability
GJ Norga, C Marchiori, C Rossel, A Guiller, Jean-Pierre Locquet, H Siegwart, D Caimi, J Fompeyrine, Jin Won Seo, Ch Dieker
Journal of Applied Physics 99(8), 084102, AIP, 2006

Thermal stability of the SrTiO/(Ba, Sr)O stacks epitaxially grown on Si
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, J.W. Seo
Applied Physics Letters88, 072913, 2006

High-κ dielectrics for the gate stack
J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, J.W. Seo
Journal of Applied Physics 100(5), 051610, AIP, 2006

B-site substitution in LaTiO3 thin films: influence on the titanium oxidation state.
A. Guiller, C. Marchiori, M. Sousa, R. Germann, J.P. Locquet, J. Fompeyrine, J.W. Seo
Bulletin of the American Physical Society, APS, 2006

Solid phase epitaxy of SrTiO3 on (Ba,Sr)
GJ Norga, C. Marchiori, C. Rossel, A. Guiller, JP Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, JW Seo, C. Dieker
Journal of Applied Physics 99(8), 084102-084102, AIP, 2006

High Mobility Channels for Ultimate CMOS
D. Sadana, S. Koester, Y. Sun, EW Kiewra, S.W. Bedell, A. Reznicek, J. Ott, K. Fogel, D.J. Webb, J. Fompeyrine, others
ECS Transactions 3(2), 343-354, The Electrochemical Society, 2006

Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO3 Gate Dielectrics on Si (100)
G. Norga, C. Marchiori, C. Rossel, A. Guiller, J.P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, JW Seo, C. Dieker
MRS Proceedings, 2006

Thermal stability of the SrTiO3/(Ba, Sr)O
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, GJ Norga, JW Seo
Applied Physics Letters 88(7), 072913-072913, AIP, 2006

GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics
SJ Koester, EW Kiewra, Y. Sun, DA Neumayer, JA Ott, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet, M. Sousa, others
Device Research Conference, 2006 64th, pp. 43-44

Current challenges in Ge MOS technology
A. Dimoulas, M. Houssa, A. Ritenour, J. Fompeyrine, W. Tsai, JW Seo, Y. Panayiotatos, P. Tsipas, D.P. Brunco, M.R. Caymax, others
ECS Transactions 3(2), 371-384, The Electrochemical Society, 2006

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and alpha-Si/SiO2 interlayers
EW Kiewra, Y. Sun, DA Neumayer, JA Ott, M. Copel, DK Sadana, DJ Webb, J. Fompeyrine, C. Marchiori, M. Sousa, others
2006 - en.scientificcommons.org

Solid phase epitaxy of SrTiO on (Ba, Sr) O/ Si (100): The relationship between oxygen stoichiometry and interface stability
GJ Norga, C. Marchiori, C. Rossel, A. Guiller, J.P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, J.W. Seo, C. Dieker
Journal of Applied Physics99, 084102, 2006

Characterization of field-effect transistors with La2Hf2O7 and Hf
ZM Rittersma, JC Hooker, G. Vellianitis, J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram
Journal of Applied Physics 99(2), 024508-024508, 2006

Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics
Y. Sun, SJ Koester, EW Kiewra, KE Fogel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet, M. Sousa, R. Germann
64th Device Research Conference, pp. 49-50, 2006

Field-effect transistors with SrHfO3 as gate oxide
C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.P. Locquet, J. Fompeyrine
Applied Physics Letters 89(5), 053506, AIP, 2006

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers
SJ Koester, EW Kiewra, Y. Sun, DA Neumayer, JA Ott, M. Copel, DK Sadana, DJ Webb, J. Fompeyrine, J.P. Locquet
Applied Physics Letters 89(4), 042104, 2006


2005

Electric-field-induced modulation of the magnetic penetration depth of superconducting La2-xSrxCuO4 ultrathin films
A. Ruefenacht, P. Martinoli, J. Fompeyrine, D. Caimi, J.P. Locquet
Bulletin of the American Physical Society, APS, 2005

Phase of reflection high-energy electron diffraction oscillations during (Ba, Sr) O epitaxy on Si (100): A marker of Sr barrier integrity
GJ Norga, C. Marchiori, A. Guiller, J.P. Locquet, C. Rossel, H. Siegwart, D. Caimi, J. Fompeyrine, T. Conard
Applied Physics Letters 87(26), 262905-262905, AIP, 2005


2004

Orientation selection in functional oxide thin films
GJ Norga, L. Fé, F. Vasiliu, J. Fompeyrine, J.P. Locquet, O. Van der Biest
Journal of the European Ceramic Society 24(6), 969-974, Elsevier, 2004

Domain-size-dependent exchange bias in CoLaFeO3
A. Scholl, F. Nolting, J.W. Seo, H. Ohldag, J. Stohr, S. Raoux, J.P. Locquet, J. Fompeyrine
Applied Physics Letters 85(18), 4085-4087, AIP, 2004


2003

MBE-grown epitaxial oxides for advanced gate stack
J. FOMPEYRINE, G. NORGA, A. GUILLER, C. MARCHIORI, J.P. LOCQUET, H. SIEGWART, D. HALLEY, C. ROSSEL
WODIM: workshop on dielectrics in microelectronics, pp. 65--68, 2003

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si
JW Seo, J. Fompeyrine, A. Guiller, G. Norga, C. Marchiori, H. Siegwart, J.P. Locquet
Applied Physics Letters 83(25), 5211-5213, AIP, 2003

Growth of Perovskites with Crystalline Interfaces on Si (100)
GJ Norga, A Guiller, C Marchiori, JP Locquet, H Siegwart, D Halley, C Rossel, D Caimi, JW Seo, J Fompeyrine
MRS Proceedings, pp. 219-226, 2003

Growth and electrical characterization of high K oxide films on SOI wafers.
J.P. Locquet, D. Halley, G. Norga, J. Fompeyrine, JW Seo, A. Guiller, C. Marchiori, H. Siegwart, C. Rossel
APS March Meeting Abstracts, pp. 6008, 2003

Growth of single unit-cell superconducting La2-xSrxCuO4 films
A. Rüfenacht, P. Chappatte, S. Gariglio, C. Leemann, J. Fompeyrine, J.P. Locquet, P. Martinoli
Solid-State Electronics 47(12), 2167-2170, Elsevier, 2003

Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-κ layer
D. Halley, G. Norga, A. Guiller, J. Fompeyrine, J.P. Locquet, U. Drechsler, H. Siegwart, C. Rossel
Journal of Applied Physics 94(10), 6607-6610, AIP, 2003


2002

Zirconates heteroepitaxy on silicon
J. Fompeyrine, J.W. Seo, H. Seigwart, C. Rossel, J.P. Locquet
APS March Meeting Abstracts, pp. 8005, 2002

Exchange coupling in LaFeO2/Co thin film systems
J.W. Seo, J. Fompeyrine, H. Seigwart, J.P. Locquet, E. Fullerton
APS Meeting Abstracts, pp. 15003, 2002

Observing a frozen ferromagnetic moment at the ferromagnet/antiferromagnet interface of an exchange bias system
A. Hoffmann, M. Fitzsimmons, JW Seo, H. Siegwart, J. Fompeyrine, J.P. Locquet, JA Dura, CF Majkrzak
APS Meeting Abstracts, pp. 15002, 2002

Induced magnetic moments at a ferromagnet-antiferromagnet interface
A. Hoffmann, J.W. Seo, M.R. Fitzsimmons, H. Siegwart, J. Fompeyrine, J.P. Locquet, JA Dura, CF Majkrzak
Physical Review B 66(22), 220406, APS, 2002


2001

Domain Structure in LaFeO3 Thin Films and Its Role on Exchange Coupling
J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet
Materials Research Society Symposium Proceedings, pp. 8, 2001

Studies of the magnetic structure at the ferromagnet-antiferromagnet interface
A. Scholl, F. Nolting, J. Stohr, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag, H.A. Padmore
Journal of Synchrotron Radiation 8(2), 101-104, International Union of Crystallography, 2001

Exploring the microscopic origin of exchange bias with photoelectron emission microscopy
A. Scholl, F. Nolting, J. Stohr, T. Regan, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag, others
Journal of Applied Physics 89(11), 7266-7268, AIP, 2001


2000

Investigations of the surface morphology of La2 CuO4 MBE-grown thin films before and after electrochemical oxidation
A. Daridon, J. Fompeyrine, J.P. Locquet, C. Musil, H. Siegenthaler
Surface Science 465(1), 149-162, Elsevier, 2000

Nanoscale magnetostrictive response in a thin film owing to a local magnetic field
R. Berger, F. Krause, A. Dietzel, J.W. Seo, J. Fompeyrine, J.P. Locquet
Applied Physics Letters 76(5), 616-618, AIP, 2000

Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F. Nolting, A. Scholl, J. Stöhr, J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, S. Anders, J. Lüning, EE Fullerton, others
Nature 405(6788), 767-769, Nature Publishing Group, 2000

Observation of Antiferromagnetic Domains in Epitaxial Thin Films
F. Nolting, A. Scholl, J. Stöhr, J. Lüning, S. Anders, JW Seo, J. Fompeyrine, H. Siegwart, JP Locquet, EE Fullerton, others
Science 287(5455), 1014-1016, American Association for the Advancement of Science, 2000


1999

Growth and characterization of ferroelectric LaTiO3x5 thin films
J. Fompeyrine, J.W. Seo, J.P. Locquet
Journal of the European Ceramic Society 19(6), 1493-1496, Elsevier, 1999


1998

Microstructural investigation of La2Ti2O7 thin films grown by MBE
Jeongwoo Seo, J Fompeyrine, Jean-Pierre Locquet
SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, pp. 326--333, 1998

Doubling the critical temperature of La1.9Sr0.1CuO4 thin films using epitaxial strain.
J.P. Locquet, J. Fompeyrine, E. Mächler, J. Perret, JW Seo
APS March Meeting Abstracts, pp. 3506, 1998

Microstructural investigation of La1.9Sr0.1CuO4 thin films grown by MBE
J. Seo, J. Perret, J. Fompeyrine, G. Van Tendeloo, J.P. Locquet
SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, pp. 300-309, 1998

Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
J.P. Locquet, J. Perret, J. Fompeyrine, E. Mächler, J.W. Seo, G. Van Tendeloo
Nature 394(6692), 453-456, Nature Publishing Group, 1998

Local determination of the stacking sequence of layered materials
J. Fompeyrine, R. Berger, HP Lang, J. Perret, E. Mächler, C. Gerber, J.P. Locquet
Applied Physics Letters 72(14), 1697-1699, AIP, 1998


1996

Electrochemical Modification of La2CuO4: The Role Played by Microstructure
EJ Williams, A. Daridon, F. Arrouy, J. Fompeyrine, E. Mächler, H. Siegenthaler, J.P. Locquet
MRS Proceedings, 1996