Siegfried F. Karg  Siegfried F. Karg photo         

contact information

Research Staff Member
Zurich Research Laboratory, Zurich, Switzerland


more information

More information:  Neuromorphic computing  |  Nanoscale thermoelectrics

2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2007 | 2006


  1. E. Corti, J.A. Jimenez, K.M. Niang, J. Robertson, K.E. Moselund, B. Gotsmann, A.M. Ionescu, S. Karg
    Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks,
    Front. Neurosci. 15:628254, 2021, DOI: 10.3389/fnins.2021.628254


  1. Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian Ionescu, John Robertson, Siegfried Karg,
    Scaled resistively-coupled VO2 oscillators for neuromorphic computing
    Solid State Electronics, 168, June 2020, 107729 DOI: 10.1016/j.sse.2019.107729
  2. Corti, A. Khanna, K.M. Niang, J. Robertson, K.E. Moselund, B. Gotsmann, and S. Karg,
    Time-delay encoded image recognition in a network of resistively-coupled VO2 on Si oscillators,
    IEEE Electron Device Letters 41(4), 2020, 629-632 DOI: 10.1109/LED.2020.2972006

Back to top


  1. Navarro, S. Karg, C. Marquez, S. Navarro, C. Convertino, C. Zota, L. Czornomaz, and F. Gamiz,
    Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm,
    Nature electronics, vol. 2, 2019, 412–419, DOI: 10.1038/s41928-019-0282-6
  2. Petrychuk, I. Zadorozhnyi, Y. Kutovyi, S. Karg, H. Riel, S. Vitusevich,
    Noise spectroscopy to study the 1D electron transport properties in InAs nanowires,
    DOI: 10.1088/1361-6528/ab175e

Back to top


  1. Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Igor Stolichnov, Adrian Ionescu, Siegfried Karg,
    Resistive coupled VO2 oscillators for image recognition,
    2018 IEEE International Conference on Rebooting Computing (ICRC), doi: 1109/ICRC.2018.8638626
  2. Navarro, S. Navarro, C. Marquez, C. Sampedro, L. Donetti, S. Karg, H. Riel and F. Gamiz,
    InGaAs Capacitor-Less DRAM Cells TCAD Demonstration,
    IEEE JEDS, vol. 6, pp. 884-892, 2018. doi: 10.1109/JEDS.2018.2859233

Back to top


  1. Mosso, U. Drechsler, F. Menges, P. Nirmalraj, S. Karg, H. Riel & B. Gotsmann
    Heat transport through atomic contacts
    Nature Nanotechnology 12, 430–433 (2017), doi: 10.1038/NNANO.2016.302
  2. Gooth, V. Schaller, S. Wirths, H. Schmid, M. Borg, N. Bologna, S. Karg, and H. Riel
    Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
    Appl. Phys. Lett. 110, 083105 (2017);
  3. Gooth, M. Borg, H. Schmid, V. Schaller, S. Wirths, K. E. Moselund, M. Luisier, S. Karg, and H. Riel
    Ballistic one-dimensional InAs nanowire cross-junction interconnect
    Nano Lett., 2017, 17 (4), pp 2596–2602 DOI: 10.1021/acs.nanolett.7b00400

Back to top


  1. S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, H. Riel
    "Ballistic transport and high thermopower in one-dimensional InAs nanowire,"
    Solid-State Device Research Conference (ESSDERC), 2016.

Back to top


  1. P. Mensch, S. Karg, V. Schmidt, B. Gotsmann, H. Schmid, H. Riel
    "One-Dimensional Behavior and High Thermoelectric Power Factor in Thin InAs Nanowires,"
    Applied Physics Letters 106(9), 093101, 2015.
  2. D. Cutaia, K.E. Moselund, M.B. Borg, H. Schmid, L.M. Gignac, C.M. Breslin, S. Karg, E. Uccelli, H. Riel,
    "Vertical InAs-Si GAA TFETs Integrated on Si using Selective Epitaxy in Nanotube Templates,"
    IEEE Journal of the Electron Devices Society 3(3), 176-183, 2015.

Back to top


  1. V. Schmidt, P.F.J. Mensch, S.F. Karg, B. Gotsmann, P. Das Kanungo, H. Schmid, H. Riel,
    "Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires,"
    Applied Physics Letters
    104, 012113, 2014.
  2. S. F. Karg, V. Troncale, U. Drechsler, P. Mensch, P. Das Kanungo, H. Schmid, V. Schmidt, L. Gignac, H. Riel, B. Gotsmann,
    "Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors,"
    Nanotechnology 25(30), 305702, 2014.
  3. G. Signorello, E. Lörtscher, P. A. Khomyakov, S. Karg, D. L. Dheeraj, B. Gotsmann, H. Weman, H. Riel,
    "Inducing a Direct-to-Pseudodirect Bandgap Transition in Wurtzite GaAs Nanowires with Uniaxial Stress,"
    Nature Communications 5, 3655, 2014.
  4. G. Signorello, S. Karg, E. Lörtscher, P. A. Khomyakov, B. Gotsmann, M. Björk, D. L. Dheeraj, H. Weman, H. Riel,
    "Uniaxial Stress in GaAs Nanowires Reveals an Unprecedented Light Emission Tunability and Novel Bandstructure Transitions,"
    Communications of the Swiss Physical Society 45, 29, August 2014.
  5. F. Menges, P. Mensch, S. Karg, A. Stemmer, H. Riel, B. Gotsmann,
    "Nanoscale thermometry using scanning thermal microscopy,"
    Proc. Eurotherm 103: Nanoscale and Microscale Heat Transfer IV, 2014.
  6. H. Schmid, B.M. Borg, K. Moselund, P. Das Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, H. Riel,
    "III-V semiconductor nanowires for future devices,"
    Design, Automation and Test in Europe Conference and Exhibition, 2014.

Back to top


  1. S. Karg, P. Mensch, H. Schmid, P. Das Kanungo, H. Ghoneim, V. Schmidt, M. Björk, V. Troncale, H. Riel,
    "Measurement of Thermoelectric Properties of Single Semiconductor Nanowires,"
    Journal of Electronic Materials 42(7), 2409-2414, 2013.
  2. P. Mensch, K. E. Moselund, S. Karg, E. Lörtscher, M. T. Björk, H. Riel,
    "Interface State Density of Single Vertical Nanowire MOS Capacitors,"
    IEEE Transactions of Nanotechnology 12(3), 279, 2013.
  3. P. Mensch, S. Karg, B. Gotsmann, P. Das Kanungo, V. Schmidt, V. Troncale, H. Schmid, H. Riel,
    "Electrical and Thermoelectrical Properties of Gated InAs Nanowires,"
    Proc. IEEE ESSDERC, 2013.
  4. G. Signorello, S. Karg, M. T. Björk, B. Gotsmann, H. Riel,
    "Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain,"
    Nano Letters 13, 917, 2013.
  5. B. Gotsmann, F. Menges, S. Karg, V. Troncale, M. Lantz, P. Mensch, H. Schmid, P. Das Kanungo, U. Drechsler, V. Schmidt, M. Tschudy, A. Stemmer, H. Riel,
    "Heat dissipation and thermometry in nanosystems: When interfaces dominate,"
    71st Annual Device Research Conference (DRC), 231-232, 2013.

Back to top


  1. H. Ghoneim, P. Mensch, H. Schmid, C. D Bessire, R. Rhyner, A. Schenk, C. Rettner, S. Karg, K. E Moselund, H. Riel, M. T Björk,
    "In situ doping of catalyst-free InAs nanowires,"
    Nanotechnology 23(50), 505708, 2012.

Back to top


  1. P. Mensch, K. E. Moselund, S. Karg, E. Lörtscher, M. T. Björk, H. Schmid, H. Riel,
    "C-V Measurements of Single Vertical Nanowire Capacitors,"
    69th Device Research Conference Digest, 2011.
  2. K.E. Moselund, M. T. Björk, H. Schmid, H. Ghoneim, S. Karg, E. Lörtscher, W. Riess, H. Riel,
    "Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-k Gate Dielectric,"
    IEEE Transactions on Electron Devices 58(11), 2911-2916, 2011.

Back to top


  1. M.I. den Hertog, H. Schmid, D. Cooper, J. Rouviere, M.T. Björk, H. Riel, P. Rivallin, S. Karg, W. Riess,
    "Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography,"
    Nano Letters 9(11), 3837-3843 (2010).
  2. K. Moselund, H. Ghoneim, H. Schmid, M.T. Bjoerk, E. Loertscher, S. Karg, G. Signorello, D. Webb, M. Tschudy, R. Beyeler, H. Riel,
    "Solid-State Diffusion as an Efficient Doping Method for Silicon Nanowires and Nanowire Field Effect Transistors,"
    Nanotechnology 21(43), 435202 (October 2010).
  3. M.T. Björk, H. Schmid, C.D. Bessire, K.E. Moselund, H. Ghoneim, S. Karg, E. Lörtscher, H. Riel,
    "Si-InAs Heterojunction Esaki Tunnel Diodes with High Current Densities,"
    Appl. Phys. Lett. 97, 163501 (2010).

Back to top


  1. K. Moselund, H. Ghoneim, M. Bjoerk, H. Schmid, S. Karg, E. Loertscher, W. Riess, H. Riel,
    "VLS-Grown Silicon Nanowire Tunnel FET,"
    Proc. 67th Device Research Conference "DRC," Penn State University, PA (IEEE).
  2. K. Moselund, H. Ghoneim, M. Bjoerk, H. Schmid, S. Karg, E. Loertscher, W. Riess, H. Riel,
    "Comparison of VLS Grown Si NW Tunnel FETs with Different Gate Stacks,"
    Proc. 39th European Solid-State Device Research Conf. "ESSDERC 2009," Athens, Greece, Session C6L-B, paper 3082 (IEEE, September 2009).
  3. H. Ghoneim, J. Knoch, H. Riel, D. Webb, M.T. Björk, S. Karg, E. Lörtscher, H. Schmid, W. Riess,
    "Suppression of Ambipolar Behavior in Metallic Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors,"
    Appl. Phys. Lett. 95, 213504 (2009).
  4. H. Schmid, M.T. Björk, J. Knoch, S. Karg, H. Riel, W. Riess,
    "Doping Llimits of Grown in-situ Doped Silicon Nanowires Using Phosphine,"
    Nano Lett. 9, 173 (2009).

Back to top


  1. O. Hayden, M.T. Björk, H. Schmid, H. Riel, U. Drechsler, S.F. Karg, E. Lörtscher, W. Riess,
    "Fully-Depleted Nanowire Field Effect Transistor in Inversion Mode,"
    Small 3, 230 (2007).

Back to top


  1. V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, U. Gösele,
    "Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor,"
    Small 2(1), 85-88, January 2006 (published online: 7 Nov 2005).

Back to top