Ning Li  Ning Li photo       

contact information

Research Staff Member, Master Inventor
Thomas J. Watson Research Center, Yorktown Heights, NY USA

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Professional Associations

Professional Associations:  IEEE   |  IEEE Photonics Society  |  Materials Research Society (MRS)  |  Optical Society of America


Granted Patents:

US 9,818,909 LED light extraction enhancement enabled using self-assembled particles patterned surface

US 9,812,605 Nano-pillar-based biosensing device

US 9,795,718 Biocompatible devices with dissolvable substrates and methods of forming the same

US 9,772,463 Intra chip optical interconnect structure

US 9,748,412 Highly responsive III-V photodetectors using ZnO:Al as N-type emitter

US 9,742,147 Monolithic integrated photonics with lateral bipolar and BiCMOS

US 9,735,305 Monolithically integrated fluorescence on-chip sensor

US 9,733,188 Enhancing on-chip fluorescence detection

US 9,728,671 Monolithic nano-cavity light source on lattice mismatched semiconductor substrate

US 9,726,819 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

US 9,719,926 Nanopillar microfluidic devices and methods of use thereofUS9,716,367 Semiconductor optoelectronics and CMOS on sapphire substrate

US 9,715,611 Monolithic integrated focal array plane and apparatus employing the array

US 9,705,013 Crack-tolerant photovoltaic cell structure and fabrication method

US 9,704,965 Semiconductor device with self-aligned carbon nanotube gate

US 9,698,039 Controlled spalling utilizing vaporizable release layers

US 9,685,481 Monolithic visible-infrared focal plane array on silicon

US 9,670,061 Flexible electronics for wearable healthcare sensors

US 9,667,032 Plasmonic mode III-V laser as on-chip light source

US 9,653,308 Epitaxial lift-off process with guided etching

US 9,643,181 Integrated microfluidics system

US 9,608,160 Polarization free gallium nitride-based photonic devices on nanopatterned silicon

US 9,607,952 High-z oxide nanoparticles embedded in semiconductor package

US 9,601,476 Optoelectronics and CMOS integration on GOI substrate

US 9,595,805 III-V photonic integrated circuits on silicon substrate

US 9,590,393 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

US 9,588,289 Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates

US 9577196 Optoelectronics integration by transfer process

US 9564335 Method for improving quality of spalled material layers 

US 9559240 Nano-pillar-based biosensing device

US 9548421 Optoelectronic devices with back contacts

US 9518923 System and methods for fluorescence detection

US 9513220 On-chip molecule fluorescence detection

US 9496128 Controlled spalling utilizing vaporizable release layers

US 9490455 LED light extraction enhancement enabled using self-assembled particles patterned surface

US 9484209 Flexible and stretchable Sensors formed by patterned spalling

US 9472588 Monolithic visible-infrared focal plane array on silicon 

US 9472411 Spalling using dissolvable release layer 

US 9455180 Controlled spalling of fine features

US 9453190 Surface treatment of textured silicon

US 9450381 Monolithic integrated photonics with lateral bipolar and BiCMOS

US 9401583 Laser structure on silicon using aspect ratio trapping growth

US 9395490 Variable buried oxide thickness for a waveguide

US 9395489 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material

US 9372307 Monolithically integrated III-V optoelectronics with Si CMOS

US 9362444 Optoelectronics and CMOS integration on GeOI substrate

US 9344200 Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

US 9324872 Back gate single-crystal flexible thin film transistor and method of making

US 9324564 Spalling with laser-defined spall edge regions 

US 9305964 Oback contactptoelectronic devices with 

US 9275867 Method for improving quality of spalled material layers 

US 9263626 Crystalline thin film photovoltaic cell

US 9178042 Crystalline thin-film transistor

US 9129924 OLED Display with spalled semiconductor driving circuitry and other integrated functions

US 9118026 Organic semiconductors as window layers for inorganic solar cells 

US 9082690 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

US 9082689 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

US 9079269 Spalling with laser-defined spall edge regions

US 8969115 Transparent conductive electrode stack containing carbon-containing material

US 8946731 OLED Display with spalled semiconductor driving circuitry and other integrated functions

US 8936961 Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same

US 8916450 Method for improving quality of spalled material layer

US 8853529 Flexible III-V solar cell structure 

US 8791487 Zinc oxide-containing transparent conductive electrode

US 8790937 Zinc oxide-containing transparent conductive electrode

US 8741678 Transparent conductive electrode stack containing carbon-containing material

US 8709957 Spalling utilizing stressor layer portions

US 8569097 Flexible III-V solar cell structure

US 8492187 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

US 8482033 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate

 

>50 Pending Applications