Ko-Tao Lee  Ko-Tao Lee photo         

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Research Staff Member - Analog and Power Devices
Thomas J. Watson Research Center, Yorktown Heights, NY USA


Towards Gallium Nitride Integration with Silicon CMOS (Semiconductor Today - July 26, 2017)

Researchers in the USA have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) fabricated on 200mm-diameter silicon-on-insulator (SOI) substrates with multiple crystal orientations [Ko-Tao Lee, et al, IEEE Electron Device Letters, published online 27 June 2017]. The team from IBM’s T. J. Watson Research Center, Massachusetts Institute of Technology (MIT), Veeco Instruments Inc, and Columbia University, hope the work will lead to heterogeneous integration of GaN power transistors with high-speed complementary metal-oxide-semiconductor (CMOS) devices.





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