Cezar Zota
contact information
Research staff memberZurich Research Laboratory, Zurich, Switzerland +41
44
724
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93




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Journal Publications
- C Convertino, CB Zota, H. Schmid, A.M. Ionescu, KE Moselund,
“III–V heterostructure tunnel field-effect transistor”
J. Physics: Condensed Matter 30(26), 2018. - S Netsu, M Hellenbrand, C Zota, Y Miyamoto, E Lind,
“A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs”
IEEE J. Electron Devices Society 6, 408-412, 2018. - C Möhle, M Hellenbrand, C Zota, E Lind,
“1/f and RTS Noise in InGaAs Nanowire MOSFETs”
Microelectronic Engineering 178, 52-55, 2017. - CB Zota, M Borg, LE Wernersson, E Lind,
“Junctionless tri-gate InGaAs MOSFETs”
Jpn. J. Appl. Phys. 56(12), 2017. - CB Zota, E Lind,
“Size-effects in indium gallium arsenide nanowire field-effect transistors”
Applied Physics Letters 108, 063505, 2016. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current”
IEEE Electron Device Letters 37(10), 2016. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“High-Frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz”
Electronics Letters 52(22), 2016. - F Lindelöw, CB Zota, E Lind,
“Gated Hall Effect Measurements on Selectively Grown InGaAs Nanowires”
Nanotechnology 28(20), 2016. - CB Zota, D Lindgren, LE Wernersson, E Lind,
“Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires”
ACS Nano 9(10), 9892-9897, 2015. - CB Zota, LE Wernersson, E Lind,
“Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels”
IEEE Electron Device Letters 35(3), 342-344, 2014. - CB Zota, G Roll, LE Wernersson, E Lind,
“Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs”
IEEE Transactions on Electron Devices 61(12), 4078-4083, 2014. - CB Zota, SH Kim, M Yokoyama, M Takenaka, S Takagi,
“Characterization of Ni–GaSb alloys formed by direct reaction of Ni with GaSb”
Applied Physics Express 5(7), 071201, 2012.
Conference Proceedings
- CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
“First Demonstration of InGaAs FinFETs on Si for RF Applications”
CSW, 2018. - CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, L Czornomaz,
“InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance”
IEEE Symposia on VLSI Technology, 2018. - C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
Silicon Nanoelectronics Workshop 2018. - C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
ESSDERC 2018. - C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
FRENCH PAPER, ESSDERC 2018. - CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
SSDM 2018. - CB Zota, M Borg, LE Wernersson, E Lind,
“Record Performance for Junctionless Transistors in InGaAs MOSFETs”
IEEE Symposia on VLSI Technology, 2017. - C Möhle, M Hellenbrand, C Zota, E Lind,
“1/f and RTS Noise in InGaAs Nanowire MOSFETs”
INFOS Conference, 2017. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“High-Performance Field-Effect Transistors Using Selectively Grown Lateral InGaAs Nanowires”
Nanowire Week Conference, 2017. - F Lindelöw, CB Zota, E Lind,
“Hall Effect Measurements of InGaAs Nanowires”
Nanowire Week Conference, 2017. - L Ohlsson, F Lindelöw, CB Zota et al.,
“RF Noise Measurements on InGaAs Nanowire MOSETs”
Device Research Conference (DRC), 2017. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“InGaAs Tri-gate MOSFETs with Record On-Current”
IEEE International Electron Devices Meeting (IEDM), 2016. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“InGaAs Nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V”
IEEE Symposia on VLSI Technology, 2016. - CB Zota, LE Wernersson, E Lind,
“Single Suspended InGaAs Nanowire MOSFETs”
IEEE International Electron Devices Meeting (IEDM), 31.4.1-31.4.4, 2015. - CB Zota, LE Wernersson, E Lind,
“Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs”
Device Research Conference (DRC), 2015 73rd Annual, 257-258, 2015. - CB Zota, LE Wernersson, E Lind,
“In63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds= 0.5 V”
Device Research Conference (DRC), 2014 72nd Annual, 209-210, 2014. - CB Zota, LE Wernersson, E Lind,
“High transconductance, ft and fmax in In63Ga0.37As FinFETs using a novel fin formation technique”
Indium Phosphide and Related Materials (IPRM), 26th International Conference, 2014. - F Lindelöw, CB Zota, LE Wernersson, E Lind,
“High transconductance InGaAs Nanowire MOSFETs”
GigaHertz Symposium, 2016. - CB Zota, F Lindelöw, LE Wernersson, E Lind,
“InGaAs FinFETs for RF-applications”
GigaHertz Symposium, 2014. - CB Zota, SH Kim, Y Asakura, M Takenaka, S Takagi,
“Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys”
Device Research Conference (DRC), 2012 70th Annual, 71-72, 2012.