Cezar Zota           

Journal Publications

1. C Convertino, CB Zota, H. Schmid, A.M. Ionescu, KE Moselund,
   “III–V heterostructure tunnel field-effect transistor”
   J. Physics: Condensed Matter 30(26), 2018.
   
   
2. S Netsu, M Hellenbrand, C Zota, Y Miyamoto, E Lind,
   “A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs”
   IEEE J. Electron Devices Society 6,  408-412, 2018.
   
   
3. C Möhle, M Hellenbrand, C Zota, E Lind,
   “1/f and RTS Noise in InGaAs Nanowire MOSFETs”
   Microelectronic Engineering 178, 52-55, 2017.
   
   
4. CB Zota, M Borg, LE Wernersson, E Lind,
   “Junctionless tri-gate InGaAs MOSFETs”
   Jpn. J. Appl. Phys. 56(12), 2017.
   
   
5. CB Zota, E Lind,
   “Size-effects in indium gallium arsenide nanowire field-effect transistors”
   Applied Physics Letters 108, 063505, 2016.
   
   
6. CB Zota, F Lindelöw, LE Wernersson, E Lind,
   “High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current”
   IEEE Electron Device Letters 37(10), 2016.
   
   
7. CB Zota, F Lindelöw, LE Wernersson, E Lind,
   “High-Frequency InGaAs Tri-gate MOSFETs with f_max of 400 GHz”
   Electronics Letters 52(22), 2016.
   
   
8. F Lindelöw, CB Zota, E Lind,
   “Gated Hall Effect Measurements on Selectively Grown InGaAs Nanowires”
   Nanotechnology 28(20), 2016.
   
   
9. CB Zota, D Lindgren, LE Wernersson, E Lind,
   “Quantized Conduction and High Mobility in Selectively Grown In_xGa_1-xAs Nanowires”
   ACS Nano 9(10), 9892-9897, 2015.
   
   
10. CB Zota, LE Wernersson, E Lind,
    “Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels”
    IEEE Electron Device Letters  35(3), 342-344, 2014.
    
    
11. CB Zota, G Roll, LE Wernersson, E Lind,
    “Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs”
    IEEE Transactions on Electron Devices 61(12), 4078-4083, 2014.
    
    
12. CB Zota, SH Kim, M Yokoyama, M Takenaka, S Takagi,
    “Characterization of Ni–GaSb alloys formed by direct reaction of Ni with GaSb”
    Applied Physics Express 5(7), 071201, 2012.

Conference Proceedings

13. CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
    “First Demonstration of InGaAs FinFETs on Si for RF Applications”
    CSW, 2018.
    
    
14. CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, L Czornomaz,
    “InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance”
    IEEE Symposia on VLSI Technology, 2018.
    
    
15. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    Silicon Nanoelectronics Workshop 2018.
    
    
16. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    ESSDERC 2018.
    
    
17. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    FRENCH PAPER, ESSDERC 2018.
    
    
18. CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
    SSDM 2018.
    
    
19. CB Zota, M Borg, LE Wernersson, E Lind,
    “Record Performance for Junctionless Transistors in InGaAs MOSFETs”
    IEEE Symposia on VLSI Technology, 2017.
    
    
20. C Möhle, M Hellenbrand, C Zota, E Lind,
    “1/f and RTS Noise in InGaAs Nanowire MOSFETs”
    INFOS Conference, 2017.
    
    
21. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “High-Performance Field-Effect Transistors Using Selectively Grown Lateral InGaAs Nanowires”
    Nanowire Week Conference, 2017.
    
    
22. F Lindelöw, CB Zota, E Lind,
    “Hall Effect Measurements of InGaAs Nanowires”
    Nanowire Week Conference, 2017.
    
    
23. L Ohlsson, F Lindelöw, CB Zota et al.,
    “RF Noise Measurements on InGaAs Nanowire MOSETs”
    Device Research Conference (DRC), 2017.
    
    
24. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs Tri-gate MOSFETs with Record On-Current”
    IEEE International Electron Devices Meeting (IEDM), 2016.
    
    
25. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs Nanowire MOSFETs with I_ON = 555 µA/µm at I_OFF = 100 nA/µm and V_DD = 0.5 V”
    IEEE Symposia on VLSI Technology, 2016.
    
    
26. CB Zota, LE Wernersson, E Lind,
    “Single Suspended InGaAs Nanowire MOSFETs”
    IEEE International Electron Devices Meeting (IEDM), 31.4.1-31.4.4, 2015.
    
    
27. CB Zota, LE Wernersson, E Lind,
    “Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs”
    Device Research Conference (DRC), 2015 73rd Annual, 257-258, 2015.
    
    
28. CB Zota, LE Wernersson, E Lind,
    “In₆₃Ga_0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V_ds= 0.5 V”
    Device Research Conference (DRC), 2014 72nd Annual, 209-210, 2014.
    
    
29. CB Zota, LE Wernersson, E Lind,
    “High transconductance, f_t and f_max in In₆₃Ga_0.37As FinFETs using a novel fin formation technique”
    Indium Phosphide and Related Materials (IPRM), 26th International Conference, 2014.
    
    
30. F Lindelöw, CB Zota, LE Wernersson, E Lind,
    “High transconductance InGaAs Nanowire MOSFETs”
    GigaHertz Symposium, 2016.
    
    
31. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs FinFETs for RF-applications”
    GigaHertz Symposium, 2014.
    
    
32. CB Zota, SH Kim, Y Asakura, M Takenaka, S Takagi,
    “Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys”
    Device Research Conference (DRC), 2012 70th Annual, 71-72, 2012.