Cezar Zota  Cezar Zota photo         

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Postdoctoral researcher
Zurich Research Laboratory, Zurich, Switzerland
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Journal Publications

  1. C Convertino, CB Zota, H. Schmid, A.M. Ionescu, KE Moselund,
    III–V heterostructure tunnel field-effect transistor
    J. Physics: Condensed Matter 30(26), 2018.

  2. S Netsu, M Hellenbrand, C Zota, Y Miyamoto, E Lind,
    A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs
    IEEE J. Electron Devices Society 6,  408-412, 2018.

  3. C Möhle, M Hellenbrand, C Zota, E Lind,
    1/f and RTS Noise in InGaAs Nanowire MOSFETs
    Microelectronic Engineering 178, 52-55, 2017.

  4. CB Zota, M Borg, LE Wernersson, E Lind,
    Junctionless tri-gate InGaAs MOSFETs
    Jpn. J. Appl. Phys. 56(12), 2017.

  5. CB Zota, E Lind,
    Size-effects in indium gallium arsenide nanowire field-effect transistors
    Applied Physics Letters 108, 063505, 2016.

  6. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
    IEEE Electron Device Letters 37(10), 2016.

  7. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    High-Frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz
    Electronics Letters 52(22), 2016.

  8. F Lindelöw, CB Zota, E Lind,
    Gated Hall Effect Measurements on Selectively Grown InGaAs Nanowires
    Nanotechnology 28(20), 2016.

  9. CB Zota, D Lindgren, LE Wernersson, E Lind,
    Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
    ACS Nano 9(10), 9892-9897, 2015.

  10. CB Zota, LE Wernersson, E Lind,
    Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
    IEEE Electron Device Letters  35(3), 342-344, 2014.

  11. CB Zota, G Roll, LE Wernersson, E Lind,
    Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs
    IEEE Transactions on Electron Devices 61(12), 4078-4083, 2014.

  12. CB Zota, SH Kim, M Yokoyama, M Takenaka, S Takagi,
    Characterization of Ni–GaSb alloys formed by direct reaction of Ni with GaSb
    Applied Physics Express 5(7), 071201, 2012.

 

Conference Proceedings

  1. CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
    “First Demonstration of InGaAs FinFETs on Si for RF Applications”
    CSW, 2018.

  2. CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, L Czornomaz,
    “InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance”
    IEEE Symposia on VLSI Technology, 2018.

  3. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    Silicon Nanoelectronics Workshop 2018.

  4. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    ESSDERC 2018.

  5. C Convertino, CB Zota, M Sousa, D Caimi, L Czornomaz,
    FRENCH PAPER, ESSDERC 2018.

  6. CB Zota, C Convertino, M Sousa, D Caimi, L Czornomaz,
    SSDM 2018.

  7. CB Zota, M Borg, LE Wernersson, E Lind,
    Record Performance for Junctionless Transistors in InGaAs MOSFETs
    IEEE Symposia on VLSI Technology, 2017.

  8. C Möhle, M Hellenbrand, C Zota, E Lind,
    1/f and RTS Noise in InGaAs Nanowire MOSFETs
    INFOS Conference, 2017.

  9. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “High-Performance Field-Effect Transistors Using Selectively Grown Lateral InGaAs Nanowires”
    Nanowire Week Conference, 2017.

  10. F Lindelöw, CB Zota, E Lind,
    “Hall Effect Measurements of InGaAs Nanowires”
    Nanowire Week Conference, 2017.

  11. L Ohlsson, F Lindelöw, CB Zota et al.,
    “RF Noise Measurements on InGaAs Nanowire MOSETs”
    Device Research Conference (DRC), 2017.

  12. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs Tri-gate MOSFETs with Record On-Current”
    IEEE International Electron Devices Meeting (IEDM), 2016.

  13. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs Nanowire MOSFETs with ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V”
    IEEE Symposia on VLSI Technology, 2016.

  14. CB Zota, LE Wernersson, E Lind,
    “Single Suspended InGaAs Nanowire MOSFETs”
    IEEE International Electron Devices Meeting (IEDM), 31.4.1-31.4.4, 2015.

  15. CB Zota, LE Wernersson, E Lind,
    “Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs”
    Device Research Conference (DRC), 2015 73rd Annual, 257-258, 2015.

  16. CB Zota, LE Wernersson, E Lind,
    “In63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds= 0.5 V”
    Device Research Conference (DRC), 2014 72nd Annual, 209-210, 2014.

  17. CB Zota, LE Wernersson, E Lind,
    “High transconductance, ft and fmax in In63Ga0.37As FinFETs using a novel fin formation technique”
    Indium Phosphide and Related Materials (IPRM), 26th International Conference, 2014.

  18. F Lindelöw, CB Zota, LE Wernersson, E Lind,
    “High transconductance InGaAs Nanowire MOSFETs”
    GigaHertz Symposium, 2016.

  19. CB Zota, F Lindelöw, LE Wernersson, E Lind,
    “InGaAs FinFETs for RF-applications”
    GigaHertz Symposium, 2014.

  20. CB Zota, SH Kim, Y Asakura, M Takenaka, S Takagi,
    “Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys”
    Device Research Conference (DRC), 2012 70th Annual, 71-72, 2012.