Sangjin Hong, Shu-Shin Chin, et al.
Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology
This paper presents a 12-ns access-time 0.5-Mbit CMOS DRAM operated at liquid nitrogen temperatures. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of SER at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation. © 1989 IEEE
Sangjin Hong, Shu-Shin Chin, et al.
Journal of VLSI Signal Processing Systems for Signal, Image, and Video Technology
Nicky C.C. Lu, Hu H. Chao, et al.
IEEE Journal of Solid-State Circuits
Keith A. Jenkins, Walter H. Henkels
IEEE Journal of Solid-State Circuits
Wei Hwang, George Diedrich Gristede, et al.
IEEE Journal of Solid-State Circuits