Proceedings of the IEEE

Paper

01 Jan 1963

A Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs Lasers

View publication

Abstract

No abstract available.

Related

Paper

Distribution of boron-induced defects in shallow diffused surface layers of silicon

H. Rupprecht, G.H. Schwuttke

Journal of Applied Physics

Paper

Diffusion of Zn into GaAs under the presence of excess arsenic vapor

H. Rupprecht, C.Z. Lemay

Journal of Applied Physics

Paper

Study of gallium arsenide surfaces

M.H. Pilkuhn

Journal of Physics and Chemistry of Solids

Paper

Preparation and properties of solution-grown epitaxial p - N junctions in gap

M.R. Lorenz, M.H. Pilkuhn

Journal of Applied Physics

View all publications