O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
K.N. Tu
Materials Science and Engineering: A
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001