S. Gates, C.M. Greenlief, et al.
The Journal of Chemical Physics
Static secondary ion mass spectrometry (SSIMS) is shown to probe directly the coordination of surface silicon atoms to adsorbed hydrogen. Signal intensities of secondary ions, SiD+, SiD2+, and SiD3+ observed in SSIMS following D atom adsorption on Si(111)-(7×7) are proportional to the coverages of SiD, SiD2, and SiD3, respectively. Temperature-programmed desorption is used to quantify the three coverages. The SiD3+ signal in temperature-programmed SSIMS is used to measure the first-order EA (31±2 kcal mol-1) and v (1×1010±1 s-1) for surface SiD3 decomposition. © 1989.
S. Gates, C.M. Greenlief, et al.
The Journal of Chemical Physics
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Szetsen S. Lee, Maynard J. Kong, et al.
Journal of Physical Chemistry
R. Imbihl, J.E. Demuth, et al.
Physical Review B