I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We have investigated the adsorption and reaction of PH3 on Si(111)-(7×7) between 100 and 900 K. The topology, electronic structure, and chemical reactivity of the resulting P-doped surface was studied by ultraviolet photoemission spectroscopy, low-energy electron diffraction, and ion-scattering spectroscopy. The P-doped surface has a P(111)-(1×1) structure where P substitutes for the first Si-layer atoms of the Si(111) surface. This surface has no dangling bonds and is chemically inert. © 1991 The American Physical Society.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
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SPIE AeroSense 1997
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Microelectronic Engineering
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