R.L. Anderson, J.E.E. Baglin, et al.
Applied Physics Letters
A novel diffusion "marker" has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi 2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a "marker" to permit identification of the moving species (Si at T<1000°C).
R.L. Anderson, J.E.E. Baglin, et al.
Applied Physics Letters
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995
J. Angilello, J.E.E. Baglin, et al.
Journal of Electronic Materials
B.D. Terris, D. Weller, et al.
Journal of Applied Physics