Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate

S. Lombardo; J.H. Stathis; B.P. Linder

doi:10.1103/PhysRevLett.90.167601

Physical Review Letters

Paper

22 Apr 2003

Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate

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Abstract

We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of [Formula presented] on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot. © 2003 The American Physical Society.

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