J.K. Gimzewski, T.A. Jung, et al.
Surface Science
We have observed an electric-field-induced change in the dimensionality of excitons in superlattices, from three to quasi-two dimensions. The exciton binding energy of a (40 AIS)/(40 AIS) GaAs/(GaAl)As superlattice, determined from low-temperature photocurrent experiments, increases more than 6 meV by the action of an electric field perpendicular to the superlattice layers. This sharp increase, from nearly the bulk value of GaAs at very low fields to the isolated-quantum-well value at high fields, is a direct consequence of the Stark localization of electrons and holes in superlattices. © 1990 The American Physical Society.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
David B. Mitzi
Journal of Materials Chemistry
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications