Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials