M.D. Johnson, K.T. Leung, et al.
Surface Science
We examine individual Si nanowires grown by the vapor-liquid-solid mechanism, using real-time in situ ultra high vacuum transmission electron microscopy. By directly observing Au-catalyzed growth of Si wires from disilane, we show that the growth rate is independent of wire diameter, contrary to the expected behavior. Our measurements show that the unique rate-limiting step here is the irreversible, kinetically limited, dissociative adsorption of disilane directly on the catalyst surface. We also identify a novel dependence of growth rate on wire taper. © 2006 The American Physical Society.
M.D. Johnson, K.T. Leung, et al.
Surface Science
J.B. Hannon, F.-J. Meyer zu Heringdorf, et al.
Physical Review Letters
P.M. Mooney, F.K. LeGoues, et al.
Journal of Applied Physics
C. Krontiras, L. Grönberg, et al.
Thin Solid Films