Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
In this paper, discrete random dopant distribution effects in nanometer-scale MOSFETs were studied using three-dimensional, drift-diffusion "atomistic" simulations. Effects due to the random fluctuation of the number of dopants in the MOSFET channel and the microscopic random distribution of dopant atoms in the MOSFET channel were investigated. Using a simplified model for the threshold voltage fluctuation due to dopant number fluctuation, we examine the standard deviations of the threshold voltage that can be expected for a highly integrated chip. © 1998 Elsevier Science Ltd. All rights reserved.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures