Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

A study of the neutral species rf sputtered from oxide targets

J.W. Coburn, E. Taglauer, et al.

Japanese Journal of Applied Physics

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Plasma etching — a discussion of mechanisms

J.W. Coburn, Harold F. Winters

Critical Reviews in Solid State and Materials Sciences

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Etching of silicon and silicon dioxide by halofluorocarbon plasmas

E. Occhiello, F. Garbassi, et al.

Journal of Physics D: Applied Physics

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Plasma-assisted etching

J.W. Coburn

Plasma Chemistry and Plasma Processing

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Abstract

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A study of the neutral species rf sputtered from oxide targets

Plasma etching — a discussion of mechanisms

Etching of silicon and silicon dioxide by halofluorocarbon plasmas

Plasma-assisted etching