Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The reaction between electroless Ni-P and Sn and the crystallization behavior of Ni-P were investigated to better understand the effect of P content on the Ni-P layer. Electroless Ni-P specimens with three different P contents, 4.6 wt.%, 9 wt.%, and 13 wt.%, were used to study the effect of the P content and the microstructure of Ni-P on the subsequent crystallization and intermetallic compound (IMC) formation during the reaction between Ni-P and electroplated Sn. Ni3Sn4 was the major phase formed in all samples heated up to 300°C, which totally transformed into Ni 3Sn2 when samples were heated up to 450°C and the Sn layer was 0.5-μm thick. The IMC formed on the nanocrystalline Ni-P showed stronger texture compared to that formed on the amorphous Ni-P. Both the IMC thickness and density decreased with P content in the Ni-P layer, and Ni 3Sn4 morphologies varied with P content. Dissolution of Ni into Sn increased with P content, which made IMC size in the bulk Sn increase with P content.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
T.N. Morgan
Semiconductor Science and Technology