Conference paper
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
D. Schepis, F. Assaderaghi, et al.
IEDM 1997
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater. © 1977 IEEE. All rights reserved.
D. Schepis, F. Assaderaghi, et al.
IEDM 1997
H.J. Hovel, M. Albert, et al.
Conference on Semi-Insulating III-V Materials 1990
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005