Toshiaki Kirihata, Sang H. Dhong, et al.
IEEE Journal of Solid-State Circuits
This paper presents analyses of various configurations of error correction codes for the purpose of reducing the parity area for quasi-nonvolatile data retention by DRAMs. By combining long and short error correction codes, we show that the parity area can be reduced to less than 1% of the total memory size, yet the system can offer comparable reliability and adaptability as an earlier design that requires 12.5% parity area. We also claim that even without using any area for parity data, the adaptive control of the DRAM refresh rate can reduce the total risk of data loss. Finally, we discuss an efficient decoder design for long RS codes. © 2000 IEEE.
Toshiaki Kirihata, Sang H. Dhong, et al.
IEEE Journal of Solid-State Circuits
Yasunao Katayama, Kohji Takano, et al.
WCNC 2011
Guojing Cong, Huifang Wen, et al.
IPDPS 2012
Yasunao Katayama
NANO 2005