Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
PaperOn boundary conditions in lattice Boltzmann methodsShiyi Chen, Daniel Martínez, et al.Physics of Fluids
PaperKinetic model for the chemical vapor deposition of tungsten in the silane reduction processJulian J. HsiehJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films