E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
Electron-hole pair production and gunn effect in InSb
Abstract
A study of the low and high field transport properties, the Gunn effect and avalanche breakdown as a function of pressure in n-InSb has been used to obtain information about the properties of higher conduction band minima and impurity levels associated with them. © 1969.
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