Julien Autebert, Aditya Kashyap, et al.
Langmuir
A seven-layer slab was used to model the ideal GaAs(110) surface. Two coverages, t=1/2 and 1 monolayer (ML) of Na atoms on the surface were studied. The total-energy calculations with the self-consistent pseudopotential method was used to determine the positions of Na atoms on the ideal GaAs(110) surface. We find that the charge transfer is from the Na to the Ga atoms. The shift of the Fermi level with respect to the valence-band maximum from coverage of 1/2 to 1 ML is 0.33 eV downward. This result agrees reasonably with the measured value of 0.2 eV for the n-type GaAs(110) surface. © 1989 The American Physical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron