M.R. Latta, S.L. Heesacker
Proceedings of SPIE 1989
Paper
Excimer laser projection photoetching
Abstract
Direct photoetching of various resists and polymers with a 193-nm ArF excimer laser has been demonstrated by imaging a mask through a projection lens. Feature sizes ranging from 2 to 20 μm have been cleanly etched in 1-μm-thick films.
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