Zuoguang Liu, Heng Wu, et al.
VLSI Technology 2019
Extraction and analysis of external resistance (Rext) have become increasingly important in modern CMOS technology research. We show that with certain assumptions, the well-known shift-and-ratio method can be extended and still be useful for Rext extraction in short-channel devices. Its application to advanced FinFET devices in both simulation and hardware is presented.
Zuoguang Liu, Heng Wu, et al.
VLSI Technology 2019
Ruilong Xie, Pietro Montanini, et al.
IEDM 2016
Yoo-Mi Lee, Myung-Hee Na, et al.
IEDM 2017
Hiroaki Niimi, Zuoguang Liu, et al.
IEEE Electron Device Letters