K.N. Tu, G. Ottaviani, et al.
Journal of Applied Physics
Paper
Formation of submicron epitaxial islands of Pd2Si on silicon
Abstract
It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.
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