Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
P.C. Pattnaik, D.M. Newns
Physical Review B