PaperVolatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxyP.D. Kirchner, J. Woodall, et al.Applied Physics Letters
PaperNucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaE.A. Fitzgerald, G.P. Watson, et al.Journal of Applied Physics