PaperIncoherent mesoscopic hole tunneling through barrier states in p-type AlxGa1-xAs capacitorsT.W. HickmottPhysical Review B
PaperEnergetic electronic processes and negative resistance in amorphous TaTa2O5Au and AlAl2O3Au diodesT.W. HickmottThin Solid Films
PaperTemperature dependence of the relaxation of injected charge at the polycrystalline-silicon-SiO2 interfaceT.W. HickmottJournal of Applied Physics
PaperElectrical measurements on n+-GaAs-undoped Ga 0.6Al0.4 As-n-GaAs capacitorsP. Solomon, T.W. Hickmott, et al.Applied Physics Letters
