P.W. Li, E.S. Yang, et al.
IEEE Electron Device Letters
We report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.
P.W. Li, E.S. Yang, et al.
IEEE Electron Device Letters
P.S. Ho, M. Liehr, et al.
Surface Science
Q.Y. Ma, Chin-An Chang, et al.
Journal of Applied Physics
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics