I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Nis+-center is suggested which explains the symmetry of this center.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
David B. Mitzi
Journal of Materials Chemistry
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids