J. Wróbel, F. Kuchar, et al.
Surface Science
We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.
J. Wróbel, F. Kuchar, et al.
Surface Science
S.J. Koester, K. Ismail, et al.
IEEE Electron Device Letters
K.Y. Lee, K. Ismail, et al.
Microelectronic Engineering
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures