Conference paper
ETCH ANISOTROPY OF UNDOPED POLYSILICON FILMS.
D. Favreau, M. Chen, et al.
ECS Meeting 1983
The addition of a small concentration of suitably chosen noble gas to a reactive plasma is shown to permit the determination of the functional dependence of reactive particle density on plasma parameters. Examples illustrating the simplicity of this method are presented using F atomic emission from plasma-etching discharges and a comparison is made to available data in the literature.
D. Favreau, M. Chen, et al.
ECS Meeting 1983
C. Vanneste, C.C. Chi, et al.
Physical Review B
Harold F. Winters, J.W. Coburn, et al.
JVSTA
E.-A. Knabbe, J.W. Coburn, et al.
Surface Science