80 nm InGaAs MOSFET W-band low noise amplifier
Arnulf Leuther, Matthias Ohlrogge, et al.
IMS 2017
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Arnulf Leuther, Matthias Ohlrogge, et al.
IMS 2017
Christophe Rossel, P. Weigele, et al.
Solid-State Electronics
V. Djara, Marilyne Sousa, et al.
Microelectronic Engineering
Yannick Baumgartner, Benedikt F. Mayer, et al.
GFP 2017