Stefan Abel, Thilo Stöferle, et al.
CLEO/Europe-EQEC 2015
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Stefan Abel, Thilo Stöferle, et al.
CLEO/Europe-EQEC 2015
Lukas Czornomaz, Mario El Kazzi, et al.
ESSDERC 2011
M. Richter, Christophe Rossel, et al.
Journal of Crystal Growth
Giulio Ferraresi, Lukas Czornomaz, et al.
ACS AMI