R.W. Gammon, E. Courtens, et al.
Physical Review B
The utility of near-edge x-ray absorption fine structure (NEXAFS) for providing detailed chemical information about lithographic interfaces, by focusing initially on the T-topping/closure issue and probing the surface and bulk composition of the photo-acid generator in a model resist formulation was demonstrated. In addition, the extent of deprotection at the resist surface was also studied as a function of postexposure bake time using NEXAFS. The resultant data were analyzed in detail.
R.W. Gammon, E. Courtens, et al.
Physical Review B
J.A. Barker, D. Henderson, et al.
Molecular Physics
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999