M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Paper
Raman scattering in amorphous Si, Ge and III-V semiconductors
Abstract
A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.
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