Conference paper
Sensitive polysilane resists for bilayer lithography
G.M. Wallraff, R.D. Miller, et al.
ACS Spring 1991
We present a method of resolving the nuclear and electronic contributions to the third-order susceptibility χ3 in a phase conjugation experiment. The technique is applied to octylmethylpolysilane yielding χ3 (electronic)=(1.8±0.5)×10-12 esu and χ3(nuclear)=(1.1±0.4) ×10-12 esu at 532 nm.
G.M. Wallraff, R.D. Miller, et al.
ACS Spring 1991
Hiroshi Ito, G.M. Wallraff, et al.
J. Photopolym. Sci. Tech.
G.M. Wallraff, M. Baier, et al.
ACS Division of Polymer Chemistry Miami Beach Meeting 1989
Q. Lin, K.E. Petrillo, et al.
SPIE Advances in Resist Technology and Processing 1999