Scaling opportunities for Gate-All-Around and beyond: A patterning perspective

Indira Seshadri; Eric Miller; Jennifer Church; J. Zhang; Andrew Greene; Julien Frougier; Tao Li; Yasiel Cabrera; Martin Burkhardt; Spyridon Skordas; Luciana Meli; Nelson Felix

IEDM 2023

Invited talk

09 Dec 2023

Scaling opportunities for Gate-All-Around and beyond: A patterning perspective

Abstract

Here, we review how EUV (extreme ultraviolet) lithography especially in the front end of line simplifies gate all around fabrication. We discuss avenues to the further scaling of GAA - High Numerical Aperture (NA=0.55) EUV and chiplet integration.

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Abstract

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