Semiconductor Lasers

Marshall I. Nathan

doi:10.1109/PROC.1966.5115

Proceedings of the IEEE

Paper

01 Jan 1966

Semiconductor Lasers

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Abstract

This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described. © 1966, IEEE. All rights reserved.

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Raman spectra of glassy carbon

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Gunn effect in n-type InSb

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Harmonic generation in GaAs injection lasers

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Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing

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Abstract

Related

Raman spectra of glassy carbon

Gunn effect in n-type InSb

Harmonic generation in GaAs injection lasers

Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing