I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids