Variability study of silicon nanowire FETs
Yi-Bo Liao, Meng-Hsueh Chiang, et al.
NSTI-Nanotech 2011
We propose selective scaling of device footprint for 65 nm and beyond CMOS technologies. The benefits of selective scaling of device footprint are illustrated using an ultrathin-body fully depleted silicon-on-insulator transistor as an example. We study the effect of footprint scaling on device, circuit, and system level performance. A complete 2-D device structure is modeled for the numerical analysis. The results predict that an optimal footprint design can provide 30% smaller chip layout area, 20% faster speed, and 10% less dynamic power on overall chip performance benchmarked with a 53-bit pipelined multiplier. The variability analysis on both dc and ac characteristics indicates that the benefits of selective footprint scaling are not degraded by device variation. © 2007 IEEE.
Yi-Bo Liao, Meng-Hsueh Chiang, et al.
NSTI-Nanotech 2011
Chun-Yu Chen, Jyi-Tsong Lin, et al.
IEEE International SOI Conference 2010
Niladri Narayan Mojumder, Saibal Mukhopadhyay, et al.
IEEE Transactions on VLSI Systems
Ching-Te Chuang, Saibal Mukhopadhyay, et al.
MTDT 2007