Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Scanning tunneling spectroscopy is used to study p-type Ge(111)c(2×8) surfaces at temperatures between 7 and 61 K and over a wide range of tunnel currents. The spectral feature arising from Ge rest atoms is found to shift in voltage with increasing tunnel current. A comparison of the current dependence of the results with electrostatic computations of tip-induced band bending yields poor agreement. A model is discussed in which the observed shift in the rest-atom state arises from an accumulation of nonequilibrium carriers at the surface. © 2004 The American Physical Society.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Hiroshi Ito, Reinhold Schwalm
JES