PaperAn In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMTJ.J. Rosenberg, M. Benlamri, et al.IEEE Electron Device Letters
Conference paperSurface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicistsJ. Woodall, Alan C. Warren, et al.IEE/LEOS Summer Topical Meetings 1991
PaperCorrelation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfacesS. Chang, I.M. Vitomirov, et al.Physical Review B
PaperInP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctionsR.C. Gee, C.L. Lin, et al.Electronics Letters
