Hasan M. Nayfeh

Publications

• Evidence for the utility of quantum computing before fault tolerance

  • • Youngseok Kim
    • Andrew Eddins
    • et al.
  • 2023
  • Nature

• Demonstration of quantum volume 64 on a superconducting quantum computing system

  • • Petar Jurcevic
    • Ali Javadi-Abhari
    • et al.
  • 2021
  • Quantum Science and Technology

• Increasing Quantum Volume on a superconducting quantum computing system

  • • Petar Jurcevic
    • Ali Javadi
    • et al.
  • 2021
  • APS March Meeting 2021

• High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization

  • • C.-H.C-H. Lin
    • Brian Greene
    • et al.
  • 2014
  • IEDM 2014

• Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs

  • • Rajan Arora
    • Sachin Seth
    • et al.
  • 2011
  • IRPS 2011

• Investigation of kink-induced excess RF channel noise in sub -50 nm PD-SOI MOSFETs

  • • Ninad S. Wadje
    • Vijaya Bhaskara Neeli
    • et al.
  • 2010
  • IEEE International SOI Conference 2010

• Impact of lateral asymmetric channel doping on 45-nm-technology N-Type SOI MOSFETs

  • • Hasan M. Nayfeh
    • Nivo Rovedo
    • et al.
  • 2009
  • IEEE Transactions on Electron Devices

• (110) Channel, SiON gate-dielectric PMOS with record high I_on=1 mA/μm through channel stress and source drain external resistance (R _ext) engineering

  • • B. Yang
    • A. Waite
    • et al.
  • 2007
  • IEDM 2007

• High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography

  • • S. Narasimha
    • K. Onishi
    • et al.
  • 2006
  • IEDM 2006

• Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage

  • • E. Gusev
    • C. Cabral Jr.
    • et al.
  • 2004
  • IEDM 2004