Hasan M Nayfeh           

Senior research and development engineer with extensive experience in semiconductor device design and physics in support of nanoscale CMOS technology and superconducting qubit devices for quantum computing application. Received Ph.D. degree from MIT in EECS with thesis on strained silicon device scaling. Published over 32 journal publications and awarded 9 U.S. patents. Recipient of IBM's Outstanding Technical Achievement Award for contributions to scaling up client accessible quantum computing systems with cutting-edge performance.