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Dr. Martin M. Frank is a Research Staff Member at IBM T.J. Watson Research Center in Yorktown Heights, NY. His research focuses on new materials for CMOS transistor scaling and neuromorphic computing, including high-permittivity (high-k) gate dielectrics, hafnium-based as well as perovskite ferroelectrics, metal gate electrodes, and high-carrier-mobility semiconductors such as SiGe, Ge, and InGaAs.
In 1996, Dr. Frank earned a Diplom degree in physics from Ruhr-Universität Bochum, Germany. He then joined Fritz-Haber-Institut der Max-Planck-Gesellschaft in Berlin, Germany, studying the catalytic activity of oxide-supported metal nanoparticles using surface science techniques in ultra-high vacuum. In 2000, Dr. Frank received a Ph.D. degree in physics from Humboldt-Universität zu Berlin. During a postdoctoral appointment at Rutgers University, he commenced his work on high-k dielectrics, while also investigating self-assembled monolayers for molecular electronics. In 2003, Dr. Frank joined IBM to study high-k dielectrics and metal gate electrodes, and during an assignment to IMEC in Leuven, Belgium, he worked in the field of photoresist chemistry.
Dr. Frank has authored or co-authored more than 100 publications including the recent edited book Thin Films on Silicon: Electronic and Photonic Applications and multiple review articles and book chapters. He has given more than 60 invited and contributed presentations and holds more than 60 U.S. patents. He serves on the Scientific Advisory Board of the Leibniz Institute for Crystal Growth (Leibniz-Institut für Kristallzüchtung, IKZ), on the Editorial Board of the Journal Materials, on the Board of Delegates of the European Materials Research Society (E-MRS), and as a Nominator for the Japan Prize. From 2008 to 2011, he served on the IEEE Semiconductor Interface Specialists Conference (SISC) Executive Committee, in 2010 as a General Chair. From 2006 to 2010, he served on the Advisory Board of the German Academic International Network (GAIN). He chaired symposia at the 2015 and 2016 Materials Research Society (MRS) Spring Meetings, at the 2006 and 2008 European MRS (E-MRS) Spring Meetings, and at the 2006 Seventh International Conference on Microelectronics and Interfaces (AVS-ICMI).
In 2000, Dr. Frank was awarded the Otto Hahn Medal of the Max Planck Society for outstanding scientific achievements. He has also received two IBM Research Division Awards and two Outstanding Technical Achievement Awards for his contributions to high-k/metal gate and III-V technology and to the fundamental understanding of ferroelectric switching on silicon, and has been recognized as an IBM Master Inventor.
Dr. Frank is a Senior Member of the Institute of Electrical and Electronics Engineers (IEEE) and a member of the New York Academy of Sciences (NYAS), the Materials Research Society (MRS), and the Deutsche Physikalische Gesellschaft (German Physical Society, DPG).