Manuel Le Gallo is a Post-Doctoral researcher in the Memory and Cognitive Technologies group.
His main research interest is in using phase-change memory (PCM) devices for non-von-Neumann computing. He is a member of the team that has created randomly spiking neurons using phase-change materials that store data and perform computations like the human brain. This is a significant step forward in the development of energy-efficient, ultra-dense, integrated neuromorphic computing technologies.
He originally joined IBM Research - Zurich as a Master's student in 2013, working on the electrical characterization of PCM cells and the experimental investigation of melting/crystallization and subthreshold conduction. He conducted his PhD at IBM affiliated with the Institute of Neuroinformatics at ETH Zurich.
Before joining IBM, Manuel interned in the BiMOS R&D division of ABB Semiconductors in Lenzburg, Switzerland, where he conducted TCAD simulations of Bi-mode Insulating Gate Transistors (BiGTs) and performed static and dynamic electrical characterization of BiGT chips.
Manuel holds a doctoral degree in Electrical Engineering (DrSc) from ETH Zurich, a Master's degree in Electrical Engineering and Information Technology (MSc) from ETH Zurich, an undergraduate degree of Cycle Ingénieur Polytechnicien from Ecole Polytechnique (l'X), Palaiseau, France, as well as a Bachelor's degree in Engineering Physics (BEng) from Ecole Polytechnique de Montréal, Canada.