The DX centre
T.N. Morgan
Semiconductor Science and Technology
Synchrotron radiation photoemission experiments with the disilicides of Ti, V, Nb, Cr, Fe, Co, and Ni are combined with self-consistent augmented-spherical-wave calculations of the density of states for metal silicides from Ca-Si to Cu-Si. These results demonstrate the importance of silicon pmetal d bond formation extending to 6 eV below EF for all transition metals. Experiment and theory are combined to show the movement of the nonbonding d states from above EF for Ca-Si to well below EF for Cu-Si. At the same time, the antibonding Si p and Si s states are shown to be relatively insensitive to the particular metal atom in the silicide series. © 1984 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.