L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: μm-scale roughness arising from misfit dislocations formed to relieve strain, 1000-angstrom-scale roughness believed to be associated with three-dimensional growth of the electron or hole channel layers, and atomic-scale roughness with wavelengths of 10-100 angstrom. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility-limiting mechanisms, including scattering from ionized impurities and from dislocations.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
David B. Mitzi
Journal of Materials Chemistry
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009