A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
Publications
136 results at IEEE Transactions on Electron Devices
SiGe-Channel Heterojunction p-MOSFET’s
- Sophie Verdonckt-Vandebroek
- Bernard S. Meyerson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Comprehensive Study of Hot-Carrier Instability in P- and N-Type Poly-SI Gated MOSFET’s
- Charles C.-H. Hsu
- Duen-Shun Wen
- et al.
- 1994
- IEEE Transactions on Electron Devices
Nonquasi-Static Effects in Saturated Bipolar Circuits
- B.S. Wu
- C.T. Chuang
- et al.
- 1994
- IEEE Transactions on Electron Devices
IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
IVB-6 a-Si Thin Film Transistors Using Dilute-Gas Plasma-Enhanced Chemical Vapor Deposition
- S.L. Wright
- M.B. Rothwell
- et al.
- 1993
- IEEE Transactions on Electron Devices
Non-Quasi-Static Transient and Small-Signal Two-Dimensional Modeling of GaAs MESFET's with Emphasis on Distributed Effects
- Sandip Tiwari
- 1993
- IEEE Transactions on Electron Devices
Electrical and Optical Bandgaps of GexSi1-x Strained Layers
- J.J. Loferski
- J. Nijs
- et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- John D. Cressler
- James H. Comfort
- et al.
- 1993
- IEEE Transactions on Electron Devices
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices